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DMG7430LFG-7

Diodes Incorporated

DMG7430LFG-7 by Diodes Incorporated

DMG7430LFG-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 10.5A max drain current, and 0.015 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and 150°C operating temp.

Median Price

$0.336

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 2,070 parts In-Stock

1+ parts

$0.494

100+ parts

$0.208

1k+ parts

$0.149

10k+ parts

-

2,070

$0.494

$0.208

$0.149

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DigiKey

USA . 784 parts In-Stock

1+ parts

$0.720

100+ parts

$0.286

1k+ parts

$0.195

10k+ parts

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784

$0.720

$0.286

$0.195

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Mouser Electronics

USA . 16,906 parts In-Stock

1+ parts

$1.000

100+ parts

$0.423

1k+ parts

$0.234

10k+ parts

$0.181

16,906

$1.000

$0.423

$0.234

$0.181

Verical

USA . 50,000 parts In-Stock

1+ parts

-

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$0.088

50,000

-

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$0.088

Avnet

USA . 36,000 parts In-Stock

1+ parts

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36,000

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Arrow

USA . 4,000 parts In-Stock

1+ parts

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100+ parts

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$0.148

10k+ parts

$0.088

4,000

-

-

$0.148

$0.088

Farnell

UK . 2,155 parts In-Stock

1+ parts

-

100+ parts

$0.177

1k+ parts

$0.124

10k+ parts

$0.092

2,155

-

$0.177

$0.124

$0.092

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 77 parts In-Stock

1+ parts

$0.134

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-

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77

$0.134

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IBS Electronics

USA . 346,000 parts In-Stock

1+ parts

$0.351

100+ parts

$0.330

1k+ parts

-

10k+ parts

$0.119

346,000

$0.351

$0.330

-

$0.119

TME

Poland . 1,998 parts In-Stock

1+ parts

$0.510

100+ parts

$0.178

1k+ parts

$0.154

10k+ parts

$0.144

1,998

$0.510

$0.178

$0.154

$0.144

Chip Stock

USA . 71,153 parts In-Stock

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Component Sense

UK . 48,375 parts In-Stock

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48,375

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Vyrian

USA . 44,815 parts In-Stock

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44,815

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HZD GmbH

Germany . 42,000 parts In-Stock

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42,000

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Cyclops Electronics Ltd

UK . 22,740 parts In-Stock

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22,740

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NAC Semi

USA . 8,000 parts In-Stock

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8,000

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Prism Electronics

USA . 108 parts In-Stock

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108

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Distributors (Availability)

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Ampacity Inc.

Singapore . 44,753 parts In-Stock

1+ parts

$0.080

100+ parts

-

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10k+ parts

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44,753

$0.080

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Semicontronic

India . 37,649 parts In-Stock

1+ parts

$0.080

100+ parts

$0.078

1k+ parts

$0.078

10k+ parts

-

37,649

$0.080

$0.078

$0.078

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Argo Parts USA

USA . 3,738 parts In-Stock

1+ parts

$0.134

100+ parts

-

1k+ parts

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10k+ parts

$0.130

3,738

$0.134

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-

$0.130

Continental Prestige Electronics

USA . 1,281 parts In-Stock

1+ parts

$0.134

100+ parts

-

1k+ parts

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$0.132

1,281

$0.134

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$0.132

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.134

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$0.132

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500

$0.134

$0.132

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Corohmni

South Africa . 252 parts In-Stock

1+ parts

$0.604

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252

$0.604

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Modulus Dynamics

Lithuania . 20,654 parts In-Stock

1+ parts

$1.978

100+ parts

$1.978

1k+ parts

$1.978

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20,654

$1.978

$1.978

$1.978

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Andel Nordic

Denmark . 3,973 parts In-Stock

1+ parts

$6.844

100+ parts

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1k+ parts

$6.570

10k+ parts

$6.570

3,973

$6.844

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$6.570

$6.570

Eastek

USA . 390,000 parts In-Stock

1+ parts

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100+ parts

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$0.140

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390,000

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$0.140

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GreenTree Electronics

Israel . 282,000 parts In-Stock

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282,000

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

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iodParts Technologies Inc.

India . 10,580 parts In-Stock

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10,580

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Infinite Electronics LLP (Excess)

. 10,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 7,589 parts In-Stock

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7,589

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Perfect Parts

USA . 3,360 parts In-Stock

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Lixinc

USA . 2,028 parts In-Stock

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2,028

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Kepictronics

USA . 2,000 parts In-Stock

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2,000

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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Overview

Unleash the power of innovation with the DMG7430LFG-7 by Diodes Incorporated. As a leader in small signal field effect transistors, Diodes Incorporated guarantees top-notch quality and reliability. Perfect for switching applications, this N-channel transistor offers maximum power dissipation and a low drain-source on resistance, ensuring optimal performance. With its compact design and advanced technology, the DMG7430LFG-7 is the ideal choice for enhancing your electronic projects. Upgrade to Diodes Incorporated and experience the difference in quality and value today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and allows for easy handling during installation.

Polarity or Channel Type: N-CHANNEL

Enhances performance and efficiency for N-type applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and allows for added functionality with the built-in diode.

Transistor Application: SWITCHING

Ideal for switching applications in various electronic circuits.

Surface Mount: YES

Saves space on the circuit board and simplifies the manufacturing process.

Minimum DS Breakdown Voltage: 30 V

Ensures reliable operation under various conditions.

Package Shape: SQUARE

Optimal for easy placement and alignment on the circuit board.

Terminal Form: NO LEAD

Reduces the risk of damage during handling and installation.

Operating Mode: ENHANCEMENT MODE

Provides improved performance and efficiency in the enhancement mode.

Maximum Drain Current (Abs) (ID): 10.5 A

Handles high-current applications with ease and reliability.

No. of Terminals: 5

Provides necessary connections for the transistor to function efficiently.

Maximum Power Dissipation (Abs): 3.5 W

Can dissipate heat effectively to avoid overheating during operation.

Package Style (Meter): SMALL OUTLINE

Compact design saves space and allows for efficient circuit layout.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers reliable performance and high efficiency in the metal-oxide semiconductor technology.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without compromising performance.

Transistor Element Material: SILICON

Silicon material ensures stable and consistent performance of the transistor.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides corrosion resistance and ensures long-term reliability.

Maximum Drain-Source On Resistance: 0.015 ohm

Offers low resistance for efficient current flow in the circuit.

Terminal Position: DUAL

Allows for versatile mounting options and connections in the circuit.

Case Connection: DRAIN

Properly connects the drain terminal for efficient transistor operation.

Peak Reflow Temperature °C: 260

Can withstand high-temperature reflow processes during manufacturing.

Reference Standard: AEC-Q101

Complies with automotive standards for quality and reliability.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMG7430LFG-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

10.5 A

Maximum Drain Current (ID):

10.5 A

Maximum Drain-Source On Resistance:

.015 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N5

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMG7430LFG-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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