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DMG7408SFG-7

Diodes Incorporated

DMG7408SFG-7 by Diodes Incorporated

DMG7408SFG-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 7A max drain current, and 0.023 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and 150°C operating temp.

Median Price

$0.117

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 1,691 parts In-Stock

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$0.410

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$0.242

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$0.154

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$0.132

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$0.132

Verical

USA . 118,000 parts In-Stock

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$0.115

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Avnet

USA . 2,000 parts In-Stock

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DigiKey

USA . 2,000 parts In-Stock

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NAC Semi

USA . 6,000 parts In-Stock

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$0.178

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Bristol Electronics

USA . 1,950 parts In-Stock

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$0.342

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$0.137

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Dan-Mar Components

USA . 1,950 parts In-Stock

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Advanced Electronics

New Zealand . 23 parts In-Stock

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$0.703

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$0.640

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$0.576

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23

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Corohmni

South Africa . 978 parts In-Stock

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$1.467

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Native Components

USA . 748 parts In-Stock

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$2.122

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Northwest PG Solutions

USA . 2,366 parts In-Stock

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Perfect Parts

USA . 10,828 parts In-Stock

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Lixinc

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Eastek

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Overview

Looking for a reliable solution for your switching applications? Look no further than the DMG7408SFG-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated offers top-notch quality small signal field effect transistors that are perfect for various electronic applications. With its N-channel configuration, built-in diode, and 30V minimum DS breakdown voltage, this transistor provides enhanced performance and efficiency. Say goodbye to power inefficiencies and hello to seamless switching with the DMG7408SFG-7. Trust Diodes Incorporated to deliver exceptional products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material provides durability and protection for the transistor, making it suitable for various operating environments.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have lower on-state resistance and higher electron mobility, offering better performance in switching applications.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can handle higher voltage levels without breakdown, improving reliability in circuit operation.

Maximum Drain Current (Abs) (ID): 7 A

The high maximum drain current rating of 7A enables the transistor to handle high current loads, making it suitable for power switching applications.

Maximum Power Dissipation (Abs): 2.1 W

The low power dissipation of 2.1W ensures efficient operation and helps prevent overheating, increasing the reliability of the transistor.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high switching speed and low power consumption, making the transistor suitable for fast switching applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments, increasing its versatility in various applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMG7408SFG-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

7 A

Maximum Drain Current (ID):

6 A

Maximum Drain-Source On Resistance:

.023 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMG7408SFG-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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