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BS870-7-F

Diodes Incorporated

BS870-7-F by Diodes Incorporated

Diodes Inc. BS870-7-F is a N-channel FET with 60V DS breakdown voltage, 0.25A max drain current, and 5ohm RDS(on). Ideal for switching applications, it's a single configuration with built-in diode in small outline package. Operating at 150°C max temp, it features MOSFET tech and matte tin finish on Gull Wing terminals.

Median Price

$0.170

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

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Newark

USA . 18,000 parts In-Stock

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$0.036

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$0.036

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Mouser Electronics

USA . 22,220 parts In-Stock

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$0.290

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$0.113

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$0.074

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$0.290

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DigiKey

USA . 2,109 parts In-Stock

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$0.112

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$0.073

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Verical

USA . 12,000 parts In-Stock

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Chip Stock

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IBS Electronics

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Bristol Electronics

USA . 6,665 parts In-Stock

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Atlantic Semiconductor

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NAC Semi

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ComSIT USA

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Semi Source

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NexGen Digital

USA . 3,000 parts In-Stock

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VNN

France . 2,862 parts In-Stock

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Prism Electronics

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Speed Components Ltd

Israel . 2,341 parts In-Stock

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Cyclops Electronics Ltd

UK . 2,000 parts In-Stock

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Sea View Technologies

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Elcom Components

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Nova Conductors

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Semicontronic

India . 13,503 parts In-Stock

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$0.018

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$0.018

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$0.017

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Ampacity Inc.

Singapore . 11,928 parts In-Stock

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Corohmni

South Africa . 61 parts In-Stock

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Component Stockers USA

USA . 101,104 parts In-Stock

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$0.090

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$0.070

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$1.776

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Andel Nordic

Denmark . 135 parts In-Stock

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Perfect Parts

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Overview

Unlock limitless possibilities with the BS870-7-F by Diodes Incorporated, a small signal field effect transistor designed for switching applications. Crafted with precision and expertise, this N-channel transistor offers unparalleled quality and reliability. Its single configuration with built-in diode ensures seamless operation, while the enhancement mode guarantees enhanced performance. With a maximum drain current of 0.25A and a minimum DS breakdown voltage of 60V, this transistor is a game-changer in the electronics industry. Trust Diodes Incorporated to deliver cutting-edge technology that exceeds expectations. Elevate your projects with the BS870-7-F and experience innovation like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan.

Polarity or Channel Type: N-CHANNEL

Enhances efficiency and performance in certain applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies the circuit design by including a diode, saving space and cost.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast response times and low power dissipation.

Surface Mount: YES

Enables easy and efficient assembly onto circuit boards.

Minimum DS Breakdown Voltage: 60 V

Provides a high level of voltage protection for the circuit.

Package Shape: RECTANGULAR

Facilitates easy mounting and integration into circuits.

Terminal Form: GULL WING

Allows for easy soldering and secure connections.

Operating Mode: ENHANCEMENT MODE

Offers control over the transistor's conductivity, enhancing performance in specific applications.

Maximum Drain Current (Abs) (ID): 0.25 A

Suits low-power applications and offers reliable current handling capabilities.

No. of Terminals: 3

Simplifies the circuit layout and connections.

Maximum Power Dissipation (Abs): 0.3 W

Helps prevent overheating and ensures stable operation.

Package Style (Meter): SMALL OUTLINE

Suitable for compact designs and space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers reliable performance and high efficiency.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for various environments.

Transistor Element Material: SILICON

Provides high conductivity and durability for long-lasting performance.

Terminal Finish: MATTE TIN

Ensures good conductivity and reliable connections.

Maximum Drain-Source On Resistance: 5 ohm

Facilitates efficient current flow and minimizes power loss.

Terminal Position: DUAL

Provides flexibility in circuit connections.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and reliability during assembly.

Peak Reflow Temperature °C: 260

Allows for high-temperature reflow soldering, ensuring strong connections.

Maximum Feedback Capacitance (Crss): 5 pF

Minimizes feedback capacitance for improved performance in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) BS870-7-F attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.25 A

Maximum Drain Current (ID):

.25 A

Maximum Drain-Source On Resistance:

5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BS870-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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