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BS870

General Semiconductor

BS870 by General Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .31 W; JESD-30 Code: R-PDSO-G3; No. of Elements: 1;

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3

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1k+

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Kruse Electronics AG

Switzerland . 10,000 parts In-Stock

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Prism Electronics

USA . 99 parts In-Stock

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99

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Vyrian

USA . 63 parts In-Stock

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Component Stockers USA

USA . 791 parts In-Stock

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$99.990

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Native Components

USA . 85 parts In-Stock

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$1,886.390

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$1,848.662

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$1,829.798

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$1,810.934

85

$1,886.390

$1,848.662

$1,829.798

$1,810.934

Northwest PG Solutions

USA . 962 parts In-Stock

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$2,075.029

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Kepictronics

USA . 24,600 parts In-Stock

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Assy Fe

Spain . 2,800 parts In-Stock

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Perfect Parts

USA . 292 parts In-Stock

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Technical Specifications

Small Signal Field Effect Transistors (FET) BS870 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from General Semiconductor

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.25 A

Maximum Drain Current (ID):

.25 A

Maximum Drain-Source On Resistance:

5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BS870 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5210-99-910-0067, 5210999100067, 5210-99-943-8677, 5210999438677

NIIN

999100067, 999438677

Manufacturer Highlights

General Semiconductor

Vishay General Semiconductor traces its origins to the founding of the Semiconductor Components Division of General Instrument, in Hicksville, New York in 1960. In 1997, the power semiconductor business of General Instrument became an independent, publicly traded company, General Semiconductor. The same year, General Semiconductor acquired the small signal diode business of ITT Industries. Inc. With the acquisition of General Semiconductor in 2001, Vishay Intertechnology joined the top ranks of discrete semiconductor manufacturers and became a market and technology leader in power rectifiers and TVS avalanche breakdown diodes. Today, Vishay General Semiconductor serves a very wide range of customers with devices that can be used as rectifiers, signal limiters, voltage regulators, switches, signal modulators, signal mixers, signal demodulators, and oscillators. Vishay General Semiconductor customers include leading manufacturers of consumer electronics, lighting, telecommunications equipment, computers, and automotive products.

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