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BS250PSTOA

Diodes Incorporated

BS250PSTOA by Diodes Incorporated

Diodes Inc. BS250PSTOA is a P-CHANNEL FET with 45V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 0.23A ID, 14Ω RDS(on), and ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, RECTANGULAR shape, WIRE terminals in IN-LINE style.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Adafruit Industries

USA . 276 parts In-Stock

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Vyrian

USA . 848 parts In-Stock

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848

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Nova Conductors

Japan . 750 parts In-Stock

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750

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Corohmni

South Africa . 42 parts In-Stock

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$0.920

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42

$0.920

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Aztec Data Supply Inc.

USA . 4,248 parts In-Stock

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$1.313

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$1.313

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AZTECH Wire

Italy . 848 parts In-Stock

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$18.667

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848

$18.667

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Semicontronic

India . 122 parts In-Stock

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$24.050

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$23.449

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$23.328

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122

$24.050

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$23.328

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Argo Parts USA

USA . 4,261 parts In-Stock

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Continental Prestige Electronics

USA . 3,546 parts In-Stock

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Advanced Electronics

New Zealand . 276 parts In-Stock

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276

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Enhance your electronic projects with the BS250PSTOA by Diodes Incorporated, a high-quality P-CHANNEL Field Effect Transistor designed for switching applications. With its durable PLASTIC/EPOXY package and METAL-OXIDE SEMICONDUCTOR technology, this transistor offers reliable performance and efficient operation. Whether you're a hobbyist or a professional, the BS250PSTOA provides value, benefits, and advantages that will elevate your designs to the next level. Upgrade your circuits today with Diodes Incorporated's innovative FET technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy makes the package lightweight and durable, ideal for portable electronics.

Polarity or Channel Type: P-CHANNEL

The P-channel type allows for lower power consumption, making it suitable for battery-operated devices.

Configuration: SINGLE

The single configuration simplifies the circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed for switching applications, ensuring efficient and reliable performance in electronic circuits.

Minimum DS Breakdown Voltage: 45 V

With a high minimum breakdown voltage, this transistor can handle higher voltage levels without damage.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on the PCB and saves space in compact designs.

Terminal Form: WIRE

The wire terminals make it easy to connect the transistor to the circuit, simplifying the assembly process.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation allows for precise control over the transistor's conductivity, enhancing performance.

No. of Terminals: 3

The three terminals provide flexibility in circuit configurations, allowing for versatile applications.

Package Style (Meter): IN-LINE

The in-line package style offers easy integration into existing circuits and simplifies the manufacturing process.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology ensures high performance and reliability in various operating conditions.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its stability and efficiency, ensuring long-term functionality.

Terminal Finish: MATTE TIN

The matte tin finish provides excellent solderability and corrosion resistance, ensuring a reliable connection.

Maximum Drain Current (ID): 0.23 A

With a high maximum drain current, this transistor can handle current spikes and surges without overheating.

Maximum Drain-Source On Resistance: 14 ohm

The low on-resistance minimizes power loss and heat generation, improving overall efficiency.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and ensures a secure fit in the circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) BS250PSTOA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

45 V

Maximum Drain Current (ID):

.23 A

Maximum Drain-Source On Resistance:

14 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BS250PSTOA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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