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BS250

Diodes Incorporated

BS250 by Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; No. of Terminals: 3; Maximum Drain Current (Abs) (ID): .25 A;

Median Price

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Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (In-Stock)

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LIBRA Elektronik GmbH

Germany . 5,160 parts In-Stock

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Tectiva GmbH

Germany . 4,615 parts In-Stock

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J2 Sourcing AB

Sweden . 3,494 parts In-Stock

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Digiode

USA . 1,845 parts In-Stock

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Anansix

USA . 1,591 parts In-Stock

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Tech-Mark Corp

USA . 501 parts In-Stock

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501

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Vyrian

USA . 358 parts In-Stock

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358

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ABC Electronics Ltd.

UK . 220 parts In-Stock

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ComSIT Distribution GmbH

Germany . 187 parts In-Stock

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Huijzer Components

Netherlands . 180 parts In-Stock

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Speed Components Ltd

Israel . 122 parts In-Stock

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Classic Components Corporation

USA . 60 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 50 parts In-Stock

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Ack Elektronik San.Tic.Ltd.Sti

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Prism Electronics

USA . 38 parts In-Stock

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Manotoh

Italy . 30 parts In-Stock

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ECAB

Sweden . 29 parts In-Stock

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LittleDiode

UK . 27 parts In-Stock

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Whistler Technology

UK . 23 parts In-Stock

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GES GmbH

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Pegasus Components GmbH

Germany . 10 parts In-Stock

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Donberg Electronics Ltd

Ireland . 1 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 158 parts In-Stock

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$14.050

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Northwest PG Solutions

USA . 2,842 parts In-Stock

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$1,222.518

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Metaverse IC Inc.

Canada . 65,000 parts In-Stock

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Kepictronics

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UNI Independent Distributors

Spain . 6,244 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,250 parts In-Stock

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Corphita

USA . 1,198 parts In-Stock

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Native Components

USA . 1,001 parts In-Stock

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Perfect Parts

USA . 491 parts In-Stock

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Assy Fe

Spain . 82 parts In-Stock

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Technical Specifications

Small Signal Field Effect Transistors (FET) BS250 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.25 A

Maximum Drain Current (ID):

.25 A

Maximum Drain-Source On Resistance:

5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BS250 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5840-21-902-5302, 5840219025302, 5961-33-126-6398, 5961331266398, 5961-99-772-5958, 5961997725958, 9530-99-960-9064, 9530999609064, 9530-99-960-9065, 9530999609065

NIIN

219025302, 331266398, 997725958, 999609064, 999609065

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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