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AP2822CKETR-G1

Diodes Incorporated

AP2822CKETR-G1 by Diodes Incorporated

AP2822CKETR-G1 by Diodes Inc. is a SPST switch with 5 terminals, operating from -40 to 85°C. It has a low profile package, matte tin finish, and 0.11 ohm on-state resistance. Ideal for industrial applications requiring a compact design and reliable performance at supply voltages ranging from 2.7V to 5.5V.

Median Price

$0.185

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

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$0.185

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Chip Stock

USA . 32,000 parts In-Stock

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VNN

France . 3,370 parts In-Stock

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Vyrian

USA . 1,555 parts In-Stock

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Cyclops Electronics Ltd

UK . 240 parts In-Stock

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Distributors (Availability)

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Argo Parts USA

USA . 1,720 parts In-Stock

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$0.185

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$0.179

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$0.179

Continental Prestige Electronics

USA . 677 parts In-Stock

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$0.185

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$0.181

677

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$0.181

Netroflash

USA . 500 parts In-Stock

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$0.185

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500

$0.185

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Ampacity Inc.

Singapore . 132 parts In-Stock

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$6.500

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$6.500

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$8.713

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$7.929

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$7.145

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$8.713

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Aztec Data Supply Inc.

USA . 3,088 parts In-Stock

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$13.760

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AZTECH Wire

Italy . 357 parts In-Stock

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$18.508

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Corohmni

South Africa . 575 parts In-Stock

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$21.792

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 21,903 parts In-Stock

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Lixinc

USA . 17,650 parts In-Stock

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Authorized Procurement Solutions

USA . 2,218 parts In-Stock

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GreenTree Electronics

Israel . 494 parts In-Stock

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Microchip USA

USA . 189 parts In-Stock

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189

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Overview

Upgrade your electronics with the AP2822CKETR-G1 by Diodes Incorporated, a leading manufacturer in the industry. This versatile multiplexer switch offers reliability and efficiency for a wide range of applications. With a compact design and high-quality materials, this product provides seamless performance in demanding environments. Experience the benefits of smooth operation and superior functionality with the AP2822CKETR-G1, ensuring your devices run smoothly and efficiently. Trust Diodes Incorporated to deliver top-notch solutions for all your electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the internal components of the multiplexer/switch, ensuring a longer lifespan.

Surface Mount: YES

Surface mount capability allows for easy integration into circuit boards, saving space and simplifying the manufacturing process.

Nominal Supply Voltage (Vsup): 5 V

5V supply voltage is a common and reliable power source for electronic components, ensuring compatibility with a wide range of devices.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this multiplexer/switch can withstand harsh environmental conditions without sacrificing performance.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures that this product can function effectively even in extremely cold environments.

Maximum On-state Resistance (Ron): 0.11 ohm

The low on-state resistance of 0.11 ohm minimizes power loss and ensures efficient signal transmission through the multiplexer/switch.

Technical Specifications

Multiplexers & Switches AP2822CKETR-G1 attributes and parameters. Explore more Multiplexers & Switches devices from Diodes Incorporated

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2.92 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum On-state Resistance (Ron):

.11 ohm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.45 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Width (mm):

1.6 mm

Trade Compliance

AP2822CKETR-G1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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