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ADC114YUQ-7

Diodes Incorporated

ADC114YUQ-7 by Diodes Incorporated

Diodes Inc. ADC114YUQ-7 is a NPN BJT with 2 elements, built-in resistor, hFE of 80, VCE of 50V, and IC of 0.1A. It's in a small outline package suitable for surface mount applications. Ideal for high-frequency switching circuits due to its fT of 250MHz and AEC-Q101 compliance.

Median Price

$0.100

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 480 parts In-Stock

1+ parts

$0.231

100+ parts

$0.095

1k+ parts

$0.087

10k+ parts

-

480

$0.231

$0.095

$0.087

-

Mouser Electronics

USA . 2,473 parts In-Stock

1+ parts

$0.280

100+ parts

$0.074

1k+ parts

$0.066

10k+ parts

$0.043

2,473

$0.280

$0.074

$0.066

$0.043

DigiKey

USA . 2,340 parts In-Stock

1+ parts

$0.300

100+ parts

$0.116

1k+ parts

$0.076

10k+ parts

$0.053

2,340

$0.300

$0.116

$0.076

$0.053

Verical

USA . 306,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.037

306,000

-

-

-

$0.037

Arrow

USA . 18,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.035

18,000

-

-

-

$0.035

Avnet

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Farnell

UK . 980 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.062

10k+ parts

$0.051

980

-

-

$0.062

$0.051

Element14

Singapore . 980 parts In-Stock

1+ parts

-

100+ parts

$0.100

1k+ parts

$0.064

10k+ parts

$0.051

980

-

$0.100

$0.064

$0.051

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 147 parts In-Stock

1+ parts

$0.344

100+ parts

-

1k+ parts

-

10k+ parts

-

147

$0.344

-

-

-

Advanced Electronics

New Zealand . 225 parts In-Stock

1+ parts

$0.371

100+ parts

$0.338

1k+ parts

$0.304

10k+ parts

-

225

$0.371

$0.338

$0.304

-

Native Components

USA . 958 parts In-Stock

1+ parts

$152.720

100+ parts

-

1k+ parts

-

10k+ parts

$146.611

958

$152.720

-

-

$146.611

Northwest PG Solutions

USA . 853 parts In-Stock

1+ parts

$167.992

100+ parts

-

1k+ parts

-

10k+ parts

-

853

$167.992

-

-

-

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

RC Electronics

USA . 2,700 parts In-Stock

1+ parts

-

100+ parts

$0.080

1k+ parts

$0.070

10k+ parts

$0.070

2,700

-

$0.080

$0.070

$0.070

Continental Prestige Electronics

USA . 980 parts In-Stock

1+ parts

-

100+ parts

$0.083

1k+ parts

$0.065

10k+ parts

$0.061

980

-

$0.083

$0.065

$0.061

Overview

Discover the power of innovation with the ADC114YUQ-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality Small Signal Bipolar Junction Transistors that offer unmatched performance and reliability. Ideal for a wide range of applications, this NPN transistor features a separate configuration with built-in resistors, making it easy to use and versatile. With a minimum DC current gain of 80 and a maximum collector-emitter voltage of 50V, this transistor provides exceptional value and benefits to customers looking for a high-performance solution. Experience the difference with Diodes Incorporated and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors typically have higher current and power handling capabilities, making them suitable for a wide range of applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Having separate elements with built-in resistor allows for more flexibility in circuit design and can simplify the overall system design.

Surface Mount: YES

Surface mount package makes it easy to mount the transistor on a PCB, saving space and making the manufacturing process more efficient.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and orientation of the transistor on a PCB.

Minimum DC Current Gain (hFE): 80

A high minimum DC current gain ensures consistent and reliable performance in various operating conditions.

Maximum Collector-Emitter Voltage: 50 V

With a maximum voltage rating of 50V, this transistor can handle a wide range of voltage levels in different applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and stability, making the transistor suitable for long-term use.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor is suitable for low to medium power applications.

Nominal Transition Frequency (fT): 250 MHz

A high fT value of 250MHz indicates that this transistor can operate at high frequencies, making it suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ADC114YUQ-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT IN BIAS RESISTOR, HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ADC114YUQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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