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ADC114EUQ-7

Diodes Incorporated

ADC114EUQ-7 by Diodes Incorporated

Diodes Inc. ADC114EUQ-7 is a NPN BJT with 2 elements, built-in resistor, hFE of 30, VCE of 50V, and IC of 0.1A. It's in a small outline package for surface mount applications. Ideal for high-frequency designs with fT of 250MHz and AEC-Q101 compliance.

Median Price

$0.111

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 2,620 parts In-Stock

1+ parts

$0.290

100+ parts

$0.110

1k+ parts

$0.072

10k+ parts

-

2,620

$0.290

$0.110

$0.072

-

Mouser Electronics

USA . 746 parts In-Stock

1+ parts

$0.290

100+ parts

$0.111

1k+ parts

$0.073

10k+ parts

$0.036

746

$0.290

$0.111

$0.073

$0.036

Verical

USA . 384,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.035

384,000

-

-

-

$0.035

Future Electronics

Canada . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.044

9,000

-

-

-

$0.044

DigiKey

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.049

3,000

-

-

-

$0.049

Farnell

UK . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.113

1k+ parts

$0.058

10k+ parts

$0.052

3,000

-

$0.113

$0.058

$0.052

Element14

Singapore . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.111

1k+ parts

$0.061

10k+ parts

$0.055

3,000

-

$0.111

$0.061

$0.055

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 3,000 parts In-Stock

1+ parts

$0.372

100+ parts

$0.141

1k+ parts

$0.062

10k+ parts

$0.040

3,000

$0.372

$0.141

$0.062

$0.040

Native Components

USA . 845 parts In-Stock

1+ parts

$22.753

100+ parts

-

1k+ parts

-

10k+ parts

-

845

$22.753

-

-

-

Northwest PG Solutions

USA . 1,970 parts In-Stock

1+ parts

$25.028

100+ parts

$22.525

1k+ parts

-

10k+ parts

-

1,970

$25.028

$22.525

-

-

Infinite Electronics LLP (Excess)

. 42,013 parts In-Stock

1+ parts

-

100+ parts

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42,013

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Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

10k+ parts

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3,000

-

-

-

-

Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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500

-

-

-

-

Overview

Unleash the power of innovation with the ADC114EUQ-7 by Diodes Incorporated, a cutting-edge Small Signal Bipolar Junction Transistor designed to exceed expectations. Crafted with precision and reliability in mind, this NPN transistor boasts a sleek rectangular package body made of durable plastic/epoxy, making it ideal for a wide range of applications. With its separate configuration, built-in resistors, and exceptional performance, this transistor offers unparalleled value and versatility to customers seeking top-notch quality and efficiency in their electronic projects. Elevate your designs with the ADC114EUQ-7 and experience excellence like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides excellent insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for a variety of applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making this product convenient for smaller electronic devices.

Surface Mount: Yes

Suitable for automated assembly processes, reducing production time and costs for manufacturers.

Maximum Collector-Emitter Voltage: 50 V

Allows for a wide range of voltage applications, increasing the flexibility of this transistor in different circuit designs.

Maximum Collector Current (IC): 0.1 A

With a relatively high collector current capacity, this transistor can handle moderate power levels effectively.

Nominal Transition Frequency (fT): 250 MHz

The high transition frequency indicates strong performance in high-frequency applications, such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ADC114EUQ-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ADC114EUQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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