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ADC124EUQ-7

Diodes Incorporated

ADC124EUQ-7 by Diodes Incorporated

Diodes Incorporated's ADC124EUQ-7 is a NPN BJT with 2 elements, built-in resistor, hFE of 56. It has VCE of 50V, IC of 0.1A, fT of 250MHz. Used in automotive applications due to AEC-Q101 standard compliance and small outline package style.

Median Price

$0.300

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,980 parts In-Stock

1+ parts

$0.300

100+ parts

$0.116

1k+ parts

$0.070

10k+ parts

$0.046

5,980

$0.300

$0.116

$0.070

$0.046

DigiKey

USA . 2,395 parts In-Stock

1+ parts

$0.300

100+ parts

$0.116

1k+ parts

$0.076

10k+ parts

$0.053

2,395

$0.300

$0.116

$0.076

$0.053

Verical

USA . 57,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.037

57,000

-

-

-

$0.037

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 345 parts In-Stock

1+ parts

$0.357

100+ parts

-

1k+ parts

-

10k+ parts

$0.342

345

$0.357

-

-

$0.342

Northwest PG Solutions

USA . 1,809 parts In-Stock

1+ parts

$0.392

100+ parts

-

1k+ parts

-

10k+ parts

$0.346

1,809

$0.392

-

-

$0.346

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Overview

Discover the power of the ADC124EUQ-7 by Diodes Incorporated, a top-quality small signal bipolar junction transistor that offers unparalleled performance and reliability. With a focus on innovation and cutting-edge technology, Diodes Incorporated has crafted a product that exceeds expectations in a wide range of applications. From its NPN polarity to its separate configuration with built-in resistors, this transistor is designed for seamless integration and optimal functionality. Experience the value of the ADC124EUQ-7 today and unlock a world of possibilities for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and versatility in terms of mounting options.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product suitable for a wide range of applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB.

Surface Mount: YES

Surface mount technology allows for efficient automated assembly processes and saves space on the PCB.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum voltage rating, this transistor can handle a wide range of voltage levels in a circuit.

Maximum Collector Current (IC): 0.1 A

This transistor can handle a current of up to 0.1 A, making it suitable for low to medium power applications.

Nominal Transition Frequency (fT): 250 MHz

The high transition frequency allows for fast switching speeds and high-frequency operation in various applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ADC124EUQ-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

56

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ADC124EUQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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