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CMPT2907AE

Central Semiconductor

CMPT2907AE by Central Semiconductor

CMPT2907AE by Central Semiconductor is a PNP BJT transistor with 3 terminals, suitable for switching applications. It has a max power dissipation of 0.35W and can handle a max collector-emitter voltage of 60V. With a min DC current gain of 75, it operates at temperatures up to 150°C and has a transition frequency of 200MHz.

Median Price

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Lifecycle Status

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1k+

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Vyrian

USA . 784 parts In-Stock

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784

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Nova Conductors

Japan . 650 parts In-Stock

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650

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AZTECH Wire

Italy . 892 parts In-Stock

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892

$15.938

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Experience superior performance and reliability with the CMPT2907AE by Central Semiconductor. As a leading manufacturer in the industry, Central Semiconductor delivers unmatched quality in their Small Signal Bipolar Junction Transistors (BJT). With applications in switching and a maximum collector-emitter voltage of 60V, this PNP transistor offers outstanding value and benefits to customers. Trust Central Semiconductor for your electronic component needs and elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and protection for the transistor.

Polarity or Channel Type: PNP

The PNP configuration allows for high-speed switching, making it ideal for various applications.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it easy to use.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance.

Surface Mount: YES

Being surface mountable allows for easy and compact integration onto circuit boards.

Package Shape: RECTANGULAR

The rectangular shape aids in easy placement and alignment on circuit boards.

Terminal Form: GULL WING

Gull wing terminals make soldering and mounting hassle-free, ensuring a secure connection.

No. of Terminals: 3

The three terminals provide stable electrical connections for enhanced performance.

Maximum Power Dissipation (Abs): 0.35 W

With a maximum power dissipation of 0.35W, this transistor can handle higher power levels without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for dense circuit designs.

Minimum DC Current Gain (hFE): 75

The minimum DC current gain of 75 ensures stable amplification and reliable performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high heat environments.

Maximum Collector-Emitter Voltage: 60 V

The maximum collector-emitter voltage of 60V allows for safe operation within specified voltage limits.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance and reliability.

Maximum Turn On Time (ton): 45 ns

The fast turn-on time of 45ns allows for quick response in switching applications.

Maximum Collector Current (IC): 0.6 A

With a maximum collector current of 0.6A, this transistor can handle moderate current loads.

Maximum Turn Off Time (toff): 100 ns

The maximum turn-off time of 100ns ensures efficient switching and minimal downtime.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and conductivity for reliable connections.

Terminal Position: DUAL

The dual terminal position offers flexibility in mounting and connectivity options.

Nominal Transition Frequency (fT): 200 MHz

With a nominal transition frequency of 200MHz, this transistor is capable of handling high-frequency signals effectively.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CMPT2907AE attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Central Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

75

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

100 ns

Maximum Turn On Time (ton):

45 ns

Trade Compliance

CMPT2907AE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Central Semiconductor

At Central Semiconductor, we’re serious about discrete semiconductors. Our business is the pursuit of perfection in the devices we manufacture; the delivery of our products; and the services we provide; all the time, every time. To suit varying applications, our products are available in surface mount, through-hole, and bare die. We produce a wide range of standard devices, but we excel in custom, special, and other niche products and services. As we listen to customers and monitor industry changes, our product design teams are constantly developing new products to meet customers’ ever-changing requirements, as well as industry trends. Discretes are our only business. We maintain an extensive inventory of raw materials and finished goods so customers don't wait weeks or months for what they need. We welcome smaller quantity and special orders that our competitors brush aside, and we're always eager to explore inquiries for non-standard requirements. Every customer has a skilled Customer Relationship Manager/Regional Sales Manager team to coordinate all needs. Customer-focused, obsessed with quality, and dedicated to your complete satisfaction; that's what makes us different.

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