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CMPT2907ABK

Central Semiconductor

CMPT2907ABK by Central Semiconductor

CMPT2907ABK by Central Semiconductor is a PNP BJT transistor for switching applications. Features include VCEsat of 1.6V, hFE of 100, and IC of 0.6A. With a max operating temp of 150°C, it has a fT of 200MHz and CBE capacitance of 8pF.

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2

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< 1k

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Vyrian

USA . 454 parts In-Stock

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454

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Nova Conductors

Japan . 16 parts In-Stock

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16

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 300 parts In-Stock

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$1.410

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300

$1.410

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AZTECH Wire

Italy . 548 parts In-Stock

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$13.042

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548

$13.042

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Aranea Global

USA . 500 parts In-Stock

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500

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Overview

Experience the unbeatable quality of Central Semiconductor's CMPT2907ABK Small Signal Bipolar Junction Transistor. With a focus on reliability and performance, this PNP transistor is ideal for switching applications in a compact package. Enjoy the benefits of a fast turn-on time, high DC current gain, and low power dissipation. Trust Central Semiconductor for top-notch components that deliver exceptional value and efficiency in your electronic designs. Unlock new possibilities with the CMPT2907ABK transistor today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of environments.

Polarity or Channel Type: PNP

Offers high performance in switching applications, contributing to efficient operation.

Configuration: SINGLE

Simplifies circuit design and ensures easy integration into existing systems.

Transistor Application: SWITCHING

Ideal for applications that require fast switching speeds and low power consumption.

Surface Mount: YES

Allows for easy, space-saving installation on circuit boards.

Maximum VCEsat: 1.6 V

Ensures low voltage drop during operation, minimizing power loss.

Package Shape: RECTANGULAR

Facilitates easy placement and soldering on circuit boards.

Terminal Form: GULL WING

Provides secure connections and ease of installation.

No. of Terminals: 3

Simplifies circuit connections and enhances overall reliability.

Maximum Power Dissipation (Abs): 0.35 W

Ensures efficient heat dissipation, allowing for continuous operation under various conditions.

Package Style (Meter): SMALL OUTLINE

Offers a compact design for space-constrained applications.

Minimum DC Current Gain (hFE): 100

Guarantees reliable amplification in various circuit configurations.

Maximum Operating Temperature: 150 °C

Allows for operation in high-temperature environments, ensuring reliability and longevity.

Maximum Collector-Base Capacitance: 8 pF

Helps minimize the effect of capacitance in high-frequency applications.

Maximum Collector-Emitter Voltage: 60 V

Provides a wide voltage handling range for versatility in circuit design.

Transistor Element Material: SILICON

Delivers excellent performance and reliability in various operating conditions.

Maximum Turn On Time (ton): 45 ns

Ensures fast switching speeds for rapid response in switching applications.

Maximum Collector Current (IC): 0.6 A

Handles moderate current levels for a wide range of applications.

Maximum Turn Off Time (toff): 100 ns

Ensures quick turn-off times to prevent excess power dissipation.

Terminal Finish: TIN LEAD

Provides reliable solder connections for secure and durable installations.

Terminal Position: DUAL

Simplifies circuit connections and offers flexibility in board layout.

Nominal Transition Frequency (fT): 200 MHz

Supports high-frequency operation for fast signal processing and response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CMPT2907ABK attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Central Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

8 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

100 ns

Maximum Turn On Time (ton):

45 ns

Maximum VCEsat:

1.6 V

Trade Compliance

CMPT2907ABK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-496-8971, 5961014968971

NIIN

014968971

Manufacturer Highlights

Central Semiconductor

At Central Semiconductor, we’re serious about discrete semiconductors. Our business is the pursuit of perfection in the devices we manufacture; the delivery of our products; and the services we provide; all the time, every time. To suit varying applications, our products are available in surface mount, through-hole, and bare die. We produce a wide range of standard devices, but we excel in custom, special, and other niche products and services. As we listen to customers and monitor industry changes, our product design teams are constantly developing new products to meet customers’ ever-changing requirements, as well as industry trends. Discretes are our only business. We maintain an extensive inventory of raw materials and finished goods so customers don't wait weeks or months for what they need. We welcome smaller quantity and special orders that our competitors brush aside, and we're always eager to explore inquiries for non-standard requirements. Every customer has a skilled Customer Relationship Manager/Regional Sales Manager team to coordinate all needs. Customer-focused, obsessed with quality, and dedicated to your complete satisfaction; that's what makes us different.

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