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2N3055W

Baneasa S A

2N3055W by Baneasa S A

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Collector Current (IC): 15 A; JESD-30 Code: O-MBFM-P2;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N3055W attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Baneasa S A

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3055W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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