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MRF421

Asi Semiconductor

MRF421 by Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 20 A; Transistor Element Material: SILICON;

Median Price

$231.115

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Mouser Electronics

USA . 114 parts In-Stock

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$374.930

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Richardson RFPD

USA . 20 parts In-Stock

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$87.300

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$87.300

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Vyrian

USA . 8,649 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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Sunrise Surplus Inc.

USA . 6 parts In-Stock

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GES GmbH

Germany . 6 parts In-Stock

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$0.563

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$0.557

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$0.535

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One Stop Electronics

USA . 57 parts In-Stock

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$109.180

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Metaverse IC Inc.

Canada . 56,820 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 29,149 parts In-Stock

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Microchip USA

USA . 10,833 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Perfect Parts

USA . 34 parts In-Stock

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MRF421 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Asi Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

HIGH FREQUENCY BAND

JESD-30 Code:

O-CRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF421 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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