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BLF368

Asi Semiconductor

BLF368 by Asi Semiconductor

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 465 W; Minimum DS Breakdown Voltage: 70 V; Maximum Drain Current (Abs) (ID): 27 A; Terminal Form: FLAT;

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ComSIT Distribution GmbH

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Glotronic Ltd.

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Technical Specifications

RF Power Field Effect Transistors (FET) BLF368 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Asi Semiconductor

Specs

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

70 V

Maximum Drain Current (Abs) (ID):

27 A

Maximum Drain Current (ID):

27 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F4

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLF368 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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