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HMC800LP3E

Analog Devices

HMC800LP3E by Analog Devices

Analog Devices' HMC800LP3E is a GAAS technology RF attenuator with 10 dB nominal attenuation and 30 dBm max input power. With a frequency range of 0-10000 MHz, it's ideal for RF/microwave applications requiring precise signal control in temperatures ranging from -40 to 85°C. The surface-mount device features 16 terminals and a compact plastic/epoxy package body.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,424 parts In-Stock

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3,424

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Digiode

USA . 749 parts In-Stock

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749

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One Stop Electronics

USA . 635 parts In-Stock

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$2.000

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635

$2.000

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Parana Technologies

USA . 3,995 parts In-Stock

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$2.156

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$2.005

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$2.156

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$2.005

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IDEA Electronic Components Group

UK . 1,987 parts In-Stock

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$2.318

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$2.202

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DigiPath Technology Company

USA . 51 parts In-Stock

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$3.616

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$3.471

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51

$3.616

$3.471

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Ampacity Inc.

Singapore . 926 parts In-Stock

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$10.000

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926

$10.000

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AZTECH Wire

Italy . 576 parts In-Stock

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$11.759

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576

$11.759

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Semicontronic

India . 989 parts In-Stock

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$12.000

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$11.700

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$11.640

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989

$12.000

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$11.640

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Corphita

USA . 941 parts In-Stock

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941

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Overview

Upgrade your RF/Microwave systems with the HMC800LP3E by Analog Devices. With a maximum input power of 30 dBm and a nominal attenuation of 10 dB, this variable attenuator offers high-quality performance for a wide range of applications. Whether you're in the telecommunications, aerospace, or defense industries, this component is designed to meet your needs with its durable construction and reliable technology. Trust Analog Devices, a leading manufacturer in the industry, to deliver value and innovation with every product. Experience the benefits of precise signal control and seamless integration with the HMC800LP3E.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides lightweight and durable construction, making it suitable for a range of applications.

Maximum Input Power (CW): 30 dBm

Can handle high input power levels, allowing for reliable performance in demanding RF/microwave environments.

Nominal Attenuation: 10 dB

Provides the ability to precisely control and adjust signal attenuation levels as needed.

Construction: COMPONENT

Component-based construction allows for easy integration into existing circuit designs.

Power Supplies (V): 5

Operates at a standard voltage level, making it compatible with many power supplies.

No. of Terminals: 16

Multiple terminals allow for versatile connection options and compatibility with various systems.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, ensuring reliable performance in harsh environments.

Minimum Operating Temperature: -40 °C

Can operate in cold temperatures, making it suitable for a wide range of operating conditions.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides a reliable and durable terminal connection.

Maximum Insertion Loss: 3.5 dB

Low insertion loss ensures minimal signal degradation and high performance.

Technology: GAAS

Gallium arsenide technology offers high-frequency capabilities for RF/microwave applications.

RF or Microwave Device Type: VARIABLE ATTENUATOR

As a variable attenuator, it allows for real-time adjustment of signal levels, offering flexibility in signal control.

Characteristic Impedance: 50 ohm

Matches standard impedance levels, ensuring compatibility with a wide range of RF/microwave devices.

Minimum Operating Frequency: 0 MHz

Supports operation at low frequencies, making it versatile for various applications.

Mounting Feature: SURFACE MOUNT

Surface mount design allows for easy and secure installation on circuit boards.

Maximum Operating Frequency: 10000 MHz

Offers high-frequency capabilities for RF/microwave communication systems.

Technical Specifications

RF/Microwave Attenuators HMC800LP3E attributes and parameters. Explore more RF/Microwave Attenuators devices from Analog Devices

Specs

Additional Features:

TTL COMPATIBLE

Nominal Attenuation:

10 dB

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

30 dBm

Maximum Insertion Loss:

3.5 dB

JESD-609 Code:

e3

Mounting Feature:

No. of Terminals:

16

Maximum Operating Frequency:

10000 MHz

Minimum Operating Frequency:

0 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

LCC16,.12SQ,20

Power Supplies (V):

5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Attenuators

Technology:

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

HMC800LP3E RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

Category top products 20

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