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HMC273MS10G

Analog Devices

HMC273MS10G by Analog Devices

Analog Devices' HMC273MS10G is a RF attenuator with 31 dB attenuation, 4.4 dB insertion loss, and 30 dBm max input power. It operates from 700 MHz to 3800 MHz, ideal for variable attenuation in RF/microwave applications. The surface-mount device has a GaAs technology construction and supports power supplies of 3/5V.

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Lifecycle Status

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Vyrian

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Digiode

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Cyclops Electronics Ltd

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Sogenti Electronics

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Semi Source

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Bristol Electronics

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NAC Semi

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Parana Technologies

USA . 247 parts In-Stock

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$2.078

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IDEA Electronic Components Group

UK . 174 parts In-Stock

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DigiPath Technology Company

USA . 545 parts In-Stock

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$3.749

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$3.599

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AZTECH Wire

Italy . 405 parts In-Stock

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Semicontronic

India . 535 parts In-Stock

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One Stop Electronics

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GreenTree Electronics

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Corphita

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Overview

Elevate your RF/Microwave systems with the HMC273MS10G by Analog Devices. Crafted with precision and expertise, this variable attenuator offers unparalleled performance and reliability. From reducing signal strength to optimizing power levels, this component is essential for a wide range of applications. With a maximum input power of 30 dBm and a nominal attenuation of 31 dB, the HMC273MS10G ensures seamless functionality in diverse environments. Trust Analog Devices for cutting-edge technology that delivers exceptional value and benefits to customers seeking top-notch RF/Microwave solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the attenuator, ensuring a long lifespan.

Maximum Input Power (CW): 30 dBm

With a high maximum input power handling capability, this attenuator can effectively handle high power levels without degradation.

Nominal Attenuation: 31 dB

Provides a significant level of attenuation, allowing for precise control of signal strength.

Construction: COMPONENT

With a component-based construction, this attenuator offers flexibility in design and customization options.

Power Supplies (V): 3/5

Compatible with commonly available power supplies, making it easy to integrate into existing systems.

No. of Terminals: 10

With multiple terminals, this attenuator offers versatile connectivity options for various setups.

Maximum Operating Temperature: 85 °C

Can operate efficiently in high-temperature environments, ensuring reliability in different conditions.

Minimum Operating Temperature: -40 °C

Capable of operating in low-temperature environments, making it suitable for a wide range of applications.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good conductivity and solderability for easy installation.

Maximum Insertion Loss: 4.4 dB

With low insertion loss, this attenuator minimizes signal loss and maintains signal integrity.

Technology: GAAS

Utilizes Gallium Arsenide technology, known for its high-frequency performance and reliability in RF applications.

RF or Microwave Device Type: VARIABLE ATTENUATOR

As a variable attenuator, this product offers adjustable attenuation levels for precise signal control.

Characteristic Impedance: 50 ohm

Matches standard impedance requirements for RF and microwave systems, ensuring optimal signal transfer.

Minimum Operating Frequency: 700 MHz

Capable of operating at low frequencies, making it suitable for a wide range of RF and microwave applications.

Mounting Feature: SURFACE MOUNT

The surface mount design allows for easy and secure attachment to circuit boards, saving space and simplifying installation.

Maximum Operating Frequency: 3800 MHz

Suitable for high-frequency applications, providing versatility for a wide range of RF and microwave systems.

Technical Specifications

RF/Microwave Attenuators HMC273MS10G attributes and parameters. Explore more RF/Microwave Attenuators devices from Analog Devices

Specs

Nominal Attenuation:

31 dB

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

30 dBm

Maximum Insertion Loss:

4.4 dB

JESD-609 Code:

e0

Mounting Feature:

No. of Terminals:

10

Maximum Operating Frequency:

3800 MHz

Minimum Operating Frequency:

700 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

TSSOP10,.19,20

Power Supplies (V):

3/5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Attenuators

Technology:

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

HMC273MS10G RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-611-9002, 5962016119002

NIIN

016119002

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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