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HMC292LC3B

Analog Devices

HMC292LC3B by Analog Devices

Analog Devices' HMC292LC3B is a RF/Microwave Mixer with GaAs technology, featuring 12 terminals and a double balanced design. It operates b/w 16-30 GHz, with max input power of 13 dBm and conversion loss of 12.5 dB. Ideal for high-frequency applications requiring surface mount components.

Median Price

$35.350

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 3 parts In-Stock

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$35.350

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Digiode

USA . 640 parts In-Stock

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$39.235

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Vyrian

USA . 5,651 parts In-Stock

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Prism Electronics

USA . 13 parts In-Stock

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Cogito LLC

Ukraine . 11 parts In-Stock

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North Shore Components

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Parana Technologies

USA . 1,318 parts In-Stock

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$2.571

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$2.391

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IDEA Electronic Components Group

UK . 230 parts In-Stock

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$2.764

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$2.626

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$2.764

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DigiPath Technology Company

USA . 715 parts In-Stock

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$4.312

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$4.139

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Semicontronic

India . 2 parts In-Stock

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$35.100

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$34.222

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$34.047

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Corphita

USA . 854 parts In-Stock

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$37.170

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RC Electronics

USA . 2,875 parts In-Stock

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$34.490

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$31.290

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$30.190

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Perfect Parts

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Authorized Procurement Solutions

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Overview

Elevate your RF/Microwave system performance with the HMC292LC3B by Analog Devices. Known for their top-quality components, Analog Devices brings you a double balanced mixer that offers exceptional value and benefits. With a maximum conversion loss of 12.5 dB and a wide operating frequency range of 16-30 GHz, this component is perfect for high-frequency applications. Upgrade your system today and experience the superior quality and reliability that Analog Devices is known for.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic is known for its durability and ability to withstand high temperatures, making this mixer suitable for demanding RF and microwave applications.

Maximum Input Power (CW): 13 dBm

With a high maximum input power handling capability, this mixer can handle strong RF signals without distortion, ensuring reliable performance.

Construction: COMPONENT

Being a component-based mixer allows for flexibility in circuit design and customization, making it ideal for various applications.

No. of Terminals: 12

Having 12 terminals provides ample connectivity options, allowing for complex RF signal routing and processing.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature tolerance ensures the mixer can operate reliably in harsh environments without performance degradation.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, this mixer can be used in extreme cold conditions without any issues, enhancing its versatility.

Terminal Finish: Gold (Au) - with Nickel (Ni) barrier

The gold terminal finish with a nickel barrier provides excellent electrical conductivity and corrosion resistance, ensuring long-term reliability.

Technology: GAAS

Utilizing Gallium Arsenide (GaAs) technology offers high linearity and low noise performance, making this mixer ideal for sensitive RF applications.

RF or Microwave Device Type: DOUBLE BALANCED

The double balanced design reduces unwanted harmonics and spurious signals, providing clean RF output with minimal interference.

Characteristic Impedance: 50 ohm

Having a standard characteristic impedance of 50 ohms ensures compatibility with common RF systems and components, simplifying integration.

Maximum Conversion Loss: 12.5 dB

With a low maximum conversion loss, this mixer can achieve high conversion efficiency, preserving signal quality during frequency mixing.

Minimum Operating Frequency: 16000 MHz

The ability to operate at low frequencies down to 16 GHz makes this mixer suitable for a wide range of RF and microwave applications.

Mounting Feature: SURFACE MOUNT

The surface mount design simplifies installation and allows for compact circuit layouts, saving space and facilitating mass production.

Maximum Operating Frequency: 30000 MHz

With a high maximum operating frequency of 30 GHz, this mixer can handle high-frequency RF signals with ease, catering to advanced RF systems.

Technical Specifications

RF/Microwave Mixers HMC292LC3B attributes and parameters. Explore more RF/Microwave Mixers devices from Analog Devices

Specs

Additional Features:

SMA

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Conversion Loss:

12.5 dB

Maximum Input Power (CW):

13 dBm

JESD-609 Code:

e4

Mounting Feature:

No. of Terminals:

12

Maximum Operating Frequency:

30000 MHz

Minimum Operating Frequency:

16000 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

LCC12,.12SQ,20

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Mixers

Technology:

Terminal Finish:

Gold (Au) - with Nickel (Ni) barrier

Trade Compliance

HMC292LC3B RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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