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HMC351S8E

Analog Devices

HMC351S8E by Analog Devices

Analog Devices' HMC351S8E is a RF/Microwave Mixer with 8 terminals, operating from 700 MHz to 1200 MHz. It offers a max input power of 27 dBm and features double balanced technology with a conversion loss of 11.5 dB. Ideal for applications requiring high-frequency signal mixing in components assembly at temperatures ranging from -40°C to 85°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,159 parts In-Stock

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5,159

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Digiode

USA . 855 parts In-Stock

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855

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Parana Technologies

USA . 2,162 parts In-Stock

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$0.976

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$0.908

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2,162

$0.976

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$0.908

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IDEA Electronic Components Group

UK . 966 parts In-Stock

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$1.050

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$0.998

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966

$1.050

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$0.998

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DigiPath Technology Company

USA . 574 parts In-Stock

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$1.638

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$1.572

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574

$1.638

$1.572

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AZTECH Wire

Italy . 690 parts In-Stock

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$9.411

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690

$9.411

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Semicontronic

India . 653 parts In-Stock

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$14.000

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$13.650

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$13.580

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653

$14.000

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$13.580

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One Stop Electronics

USA . 541 parts In-Stock

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$21.000

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541

$21.000

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Ampacity Inc.

Singapore . 1,195 parts In-Stock

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$38.000

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$38.000

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QUARKTWIN TECHNOLOGY LTD

USA . 27,267 parts In-Stock

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Corphita

USA . 563 parts In-Stock

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Authorized Procurement Solutions

USA . 92 parts In-Stock

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Overview

Elevate your RF/Microwave applications with the HMC351S8E by Analog Devices, a high-quality double balanced mixer that delivers exceptional performance and reliability. Manufactured using cutting-edge technology and constructed with precision, this component ensures maximum conversion loss of 11.5 dB and can handle input power of up to 27 dBm. With a wide operating temperature range from -40°C to 85°C, matte tin terminal finish, and surface mounting feature, the HMC351S8E is designed to exceed your expectations. Trust Analog Devices to provide you with top-tier solutions for all your RF/Microwave needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides strong and durable packaging for the mixer, ensuring reliability and longevity in various operating conditions.

Maximum Input Power (CW): 27 dBm

Can handle high input power levels, making it suitable for demanding RF/microwave applications.

Construction: COMPONENT

Designed as a single component, simplifying the assembly process and minimizing potential points of failure.

No. of Terminals: 8

Offers ample terminals for multiple connections, allowing for flexibility in circuit design and integration.

Maximum Operating Temperature: 85 °C

Can operate reliably at high temperatures, suitable for applications that require extended periods of use.

Minimum Operating Temperature: -40 °C

Capable of functioning in cold environments, making it versatile for a wide range of operating conditions.

Terminal Finish: MATTE TIN

The matte tin finish provides a stable and low-resistance connection, ensuring efficient signal transmission.

Technology: GAAS

Utilizes Gallium Arsenide technology for high-speed performance and low noise, ideal for RF/microwave signal processing.

RF or Microwave Device Type: DOUBLE BALANCED

Double balanced design reduces unwanted signals and interferences, improving signal purity and overall performance.

Characteristic Impedance: 50 ohm

Matches standard impedance levels, facilitating easier integration into existing RF/microwave systems.

Maximum Conversion Loss: 11.5 dB

Maintains low conversion loss levels, preserving signal integrity and minimizing power loss during signal processing.

Minimum Operating Frequency: 700 MHz

Capable of handling low frequencies, suitable for a wide range of RF/microwave applications.

Mounting Feature: SURFACE MOUNT

Designed for surface mount installation, simplifying the integration process and saving space in compact systems.

Maximum Operating Frequency: 1200 MHz

Supports high frequencies, making it versatile for a range of RF/microwave signal processing tasks.

Technical Specifications

RF/Microwave Mixers HMC351S8E attributes and parameters. Explore more RF/Microwave Mixers devices from Analog Devices

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Conversion Loss:

11.5 dB

Maximum Input Power (CW):

27 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Terminals:

8

Maximum Operating Frequency:

1200 MHz

Minimum Operating Frequency:

700 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

SOP8,.25

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Mixers

Technology:

Terminal Finish:

MATTE TIN

Trade Compliance

HMC351S8E RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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