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HMC-ALH313

Analog Devices

HMC-ALH313 by Analog Devices

HMC-ALH313 by Analog Devices is a wide band low power RF amplifier with 18 dB gain, operating b/w 27-33 GHz. It can handle up to 3 dBm CW input power and has a gold terminal finish. Ideal for applications requiring high frequency amplification in the RF & Microwave domain.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,360 parts In-Stock

1+ parts

-

100+ parts

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3,360

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Digiode

USA . 454 parts In-Stock

1+ parts

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454

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 3,642 parts In-Stock

1+ parts

$1.116

100+ parts

-

1k+ parts

$1.038

10k+ parts

-

3,642

$1.116

-

$1.038

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IDEA Electronic Components Group

UK . 217 parts In-Stock

1+ parts

$1.200

100+ parts

-

1k+ parts

$1.140

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217

$1.200

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$1.140

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DigiPath Technology Company

USA . 530 parts In-Stock

1+ parts

$1.872

100+ parts

$1.797

1k+ parts

-

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530

$1.872

$1.797

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Ampacity Inc.

Singapore . 190 parts In-Stock

1+ parts

$5.000

100+ parts

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190

$5.000

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AZTECH Wire

Italy . 261 parts In-Stock

1+ parts

$19.711

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261

$19.711

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Andel Nordic

Denmark . 489 parts In-Stock

1+ parts

$24.410

100+ parts

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1k+ parts

$17.090

10k+ parts

$17.090

489

$24.410

-

$17.090

$17.090

Semicontronic

India . 425 parts In-Stock

1+ parts

$27.000

100+ parts

$26.325

1k+ parts

$26.190

10k+ parts

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425

$27.000

$26.325

$26.190

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One Stop Electronics

USA . 1,589 parts In-Stock

1+ parts

$31.000

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1,589

$31.000

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Corphita

USA . 504 parts In-Stock

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504

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Overview

Boost your RF and microwave applications with the HMC-ALH313 by Analog Devices, a top-of-the-line amplifier that promises unmatched quality and reliability. Manufactured by industry leader Analog Devices, this wide band low power amplifier offers an impressive gain of 18 dB and can operate in temperatures ranging from -55 to 85°C. With its gold terminal finish and maximum input power of 3 dBm, the HMC-ALH313 is perfect for a variety of applications in the RF and microwave field. Elevate your projects with the outstanding performance and value that only Analog Devices can deliver.

Feature Benefit Bullets

Maximum Input Power (CW): 3 dBm

With a maximum input power of 3 dBm, this RF & Microwave Amplifier can handle moderate power levels without getting damaged, ensuring reliable performance.

Construction: COMPONENT

Constructed using high-quality components, this amplifier offers durability and stability in operation, making it a reliable choice for various applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this amplifier can withstand high temperatures, making it suitable for use in challenging environments.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55°C, this amplifier can also function in cold conditions, offering versatility in operating environments.

Terminal Finish: Gold (Au)

The gold terminal finish ensures good conductivity and corrosion resistance, enhancing the longevity and reliability of this amplifier.

RF or Microwave Device Type: WIDE BAND LOW POWER

Being a wideband low power amplifier, this product can amplify signals across a broad frequency range while consuming less power, making it efficient and versatile.

Characteristic Impedance: 50 ohm

With a characteristic impedance of 50 ohms, this amplifier is compatible with standard RF systems, ensuring seamless integration and optimal performance.

Gain: 18 dB

With a gain of 18 dB, this amplifier can significantly boost signal strength without introducing excessive noise, leading to improved signal quality and performance.

Minimum Operating Frequency: 27000 MHz

With a minimum operating frequency of 27,000 MHz, this amplifier is suitable for applications requiring amplification of signals in the ultra-high frequency range.

Maximum Operating Frequency: 33000 MHz

With a maximum operating frequency of 33,000 MHz, this amplifier can amplify signals in the microwave frequency range, making it ideal for a wide range of RF and microwave applications.

Technical Specifications

RF & Microwave Amplifiers HMC-ALH313 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

18 dB

Maximum Input Power (CW):

3 dBm

JESD-609 Code:

e4

Maximum Operating Frequency:

33000 MHz

Minimum Operating Frequency:

27000 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-55 Cel

RF or Microwave Device Type:

Terminal Finish:

Gold (Au)

Trade Compliance

HMC-ALH313 RF & Microwave trade compliance attributes, and parameters.

ECCN

3A001.B.2.D

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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