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HMC-ALH444

Analog Devices

HMC-ALH444 by Analog Devices

HMC-ALH444 by Analog Devices is a GAAS technology RF amplifier with 15 dB gain, operating from 1-12 GHz. It has a max input power of 12 dBm and operates b/w -55 to 85°C. Ideal for wideband low-power applications requiring a 5V power supply.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 3,500 parts In-Stock

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3,500

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Vyrian

USA . 3,079 parts In-Stock

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3,079

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Digiode

USA . 549 parts In-Stock

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549

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Distributors (Availability)

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Parana Technologies

USA . 2,056 parts In-Stock

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$2.486

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$2.312

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$2.486

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IDEA Electronic Components Group

UK . 1,093 parts In-Stock

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$2.673

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$2.539

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$2.673

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DigiPath Technology Company

USA . 1,190 parts In-Stock

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$4.170

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$4.003

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$4.170

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AZTECH Wire

Italy . 670 parts In-Stock

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$18.402

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670

$18.402

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One Stop Electronics

USA . 979 parts In-Stock

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$31.000

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979

$31.000

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Semicontronic

India . 1,468 parts In-Stock

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$32.000

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$31.200

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$31.040

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Ampacity Inc.

Singapore . 643 parts In-Stock

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$35.000

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$35.000

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Component Stockers USA

USA . 524 parts In-Stock

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$99.990

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 23,246 parts In-Stock

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Metaverse IC Inc.

Canada . 5,880 parts In-Stock

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Corphita

USA . 986 parts In-Stock

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iodParts Technologies Inc.

India . 50 parts In-Stock

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Overview

Boost your RF and microwave signal performance with the HMC-ALH444 by Analog Devices. Known for their top-notch quality and cutting-edge technology, Analog Devices brings you a wide band low power amplifier that delivers a gain of 15 dB, perfect for various applications in industries such as telecommunications, aerospace, and defense. With a maximum input power of 12 dBm and a wide operating frequency range from 1000 MHz to 12000 MHz, this component ensures reliable and efficient signal amplification. Upgrade your system with the HMC-ALH444 and experience unparalleled value and benefits for your projects.

Feature Benefit Bullets

Maximum Input Power (CW): 12 dBm

The high maximum input power capacity of 12 dBm allows for stable and reliable performance even under high power input conditions.

Construction: COMPONENT

Being a component-based construction, this product offers flexibility in integration with other systems and customization according to specific requirements.

Power Supplies (V): 5

The low power supply requirement of 5V makes this amplifier energy-efficient and suitable for portable or low-power applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this amplifier can withstand extended operation in challenging environments without compromising performance.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C ensures reliable operation even in extremely cold conditions, making it suitable for various applications.

Terminal Finish: Gold (Au)

The gold terminal finish provides excellent conductivity and corrosion resistance, ensuring long-term performance and reliability of the amplifier.

Technology: GAAS

Utilizing Gallium Arsenide (GaAs) technology allows for high-frequency operation and low noise figure, making this amplifier ideal for RF and microwave applications.

RF or Microwave Device Type: WIDE BAND LOW POWER

Being a wide-band, low-power device, this amplifier offers versatility in signal amplification across a broad frequency range while maintaining energy efficiency.

Characteristic Impedance: 50 ohm

With a characteristic impedance of 50 ohms, this amplifier is compatible with standard RF systems and ensures optimal signal transfer and matching.

Gain: 15 dB

The high gain of 15 dB amplifies the input signal with minimal distortion, providing a strong output signal for various RF and microwave applications.

Minimum Operating Frequency: 1000 MHz

The low minimum operating frequency of 1000 MHz enables this amplifier to cover a wide range of frequency bands, making it versatile for different applications.

Maximum Operating Frequency: 12000 MHz

The high maximum operating frequency of 12000 MHz allows for amplification of signals across a broad frequency spectrum, making it suitable for diverse RF and microwave systems.

Technical Specifications

RF & Microwave Amplifiers HMC-ALH444 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

15 dB

Maximum Input Power (CW):

12 dBm

JESD-609 Code:

e4

No. of Functions:

1

Maximum Operating Frequency:

12000 MHz

Minimum Operating Frequency:

1000 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-55 Cel

Package Equivalence Code:

DIE OR CHIP

Power Supplies (V):

5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Technology:

Terminal Finish:

Gold (Au)

Trade Compliance

HMC-ALH444 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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