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AS4C16M16SA-6TCNTR

Alliance Memory

AS4C16M16SA-6TCNTR by Alliance Memory

Alliance Memory's AS4C16M16SA-6TCNTR is a 16MX16 Synchronous DRAM with 166 MHz clock frequency, 70°C max temp. Ideal for applications requiring fast access times (5 ns), common I/O type, and self-refresh capability. Suitable for compact designs due to small outline package style.

Median Price

$4.890

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 587 parts In-Stock

1+ parts

$4.890

100+ parts

$4.220

1k+ parts

$3.780

10k+ parts

$3.710

587

$4.890

$4.220

$3.780

$3.710

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kruse

Germany . 75,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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75,000

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Kruse Electronics AG

Switzerland . 54,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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54,000

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ARCO, INC.

USA . 52,000 parts In-Stock

1+ parts

-

100+ parts

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52,000

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-

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IBS Electronics

USA . 807 parts In-Stock

1+ parts

-

100+ parts

$6.956

1k+ parts

$5.694

10k+ parts

-

807

-

$6.956

$5.694

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Perfect Parts

USA . 2,240 parts In-Stock

1+ parts

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100+ parts

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2,240

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Overview

Upgrade your electronic devices with the AS4C16M16SA-6TCNTR from Alliance Memory, a leading manufacturer in the DRAM category. This high-quality memory module offers synchronous operation and self-refresh capability, making it ideal for a wide range of applications. With a compact package style and maximum clock frequency of 166 MHz, this product provides exceptional performance while consuming minimal power. Trust Alliance Memory to deliver reliable and innovative solutions for your memory needs. Elevate your products with the AS4C16M16SA-6TCNTR today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the DRAM, making it suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy installation and integration onto circuit boards.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination for efficient data processing.

Nominal Supply Voltage / Vsup (V): 3.3

The optimal voltage of 3.3V ensures reliable performance and energy efficiency.

Maximum Clock Frequency (fCLK): 166 MHz

The high clock frequency allows for fast data transfer rates and quick access times.

Memory IC Type: SYNCHRONOUS DRAM

Utilizing synchronous DRAM technology enhances the overall performance and reliability of the memory.

Technical Specifications

DRAM AS4C16M16SA-6TCNTR attributes and parameters. Explore more DRAM devices from Alliance Memory

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

166 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

Length:

22.22 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.025 Amp

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

AS4C16M16SA-6TCNTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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