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Fairchild Semiconductor Small Signal Field Effect Transistors (FET) 20

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NDS331ND87Z by Fairchild Semiconductor

NDS331ND87Z

Fairchild Semiconductor

NDS331ND87Z by Fairchild Semiconductor is a N-CHANNEL FET with 20V DS Breakdown Voltage, 1.3A ID, and 0.16 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with GULL WING terminals.

SINGLE WITH BUILT-IN DIODE

20 V

1.3 A

.16 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

DUAL

SWITCHING

SILICON

FDV302PD87Z by Fairchild Semiconductor

FDV302PD87Z

Fairchild Semiconductor

Fairchild Semiconductor's FDV302PD87Z is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.12A ID, and 10 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

25 V

.12 A

.12 A

10 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

.35 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

SWITCHING

SILICON

FDV301ND87Z by Fairchild Semiconductor

FDV301ND87Z

Fairchild Semiconductor

FDV301ND87Z by Fairchild Semiconductor is a N-CHANNEL FET with 25V DS Breakdown Voltage. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring 0.22A ID and 4 ohm RDS(on). The transistor operates at up to 150°C, making it suitable for various electronic devices.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

25 V

.22 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

DUAL

SWITCHING

SILICON

FDG6322CD87Z by Fairchild Semiconductor

FDG6322CD87Z

Fairchild Semiconductor

FDG6322CD87Z by Fairchild Semiconductor is a Small Signal FET with N-CHANNEL and P-CHANNEL polarity. It features 2 elements with built-in diode for switching applications. With a max drain current of 0.41A, it operates in enhancement mode at up to 150°C temperature.

LOGIC LEVEL COMPATIBLE

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

25 V

.41 A

.22 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL AND P-CHANNEL

.3 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

SWITCHING

SILICON

FDG6301ND87Z by Fairchild Semiconductor

FDG6301ND87Z

Fairchild Semiconductor

FDG6301ND87Z by Fairchild Semiconductor is a N-CHANNEL FET for SWITCHING applications. It features 25V DS Breakdown Voltage, 0.3W Power Dissipation, and 150°C Max Operating Temp. With GULL WING terminals in a SMALL OUTLINE package, it offers 0.22A Drain Current and 4Ω On Resistance.

LOGIC LEVEL COMPATIBLE

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

25 V

.22 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.3 W

Not Qualified

FET General Purpose Power

YES

GULL WING

DUAL

SWITCHING

SILICON

FDG6303ND87Z by Fairchild Semiconductor

FDG6303ND87Z

Fairchild Semiconductor

FDG6303ND87Z by Fairchild Semiconductor is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a min DS Breakdown Voltage of 25V, Max Power Dissipation of 0.3W, and Max Operating Temperature of 150°C. This small outline transistor has GULL WING terminals and operates in ENHANCEMENT MODE.

LOGIC LEVEL COMPATIBLE

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

25 V

.5 A

.45 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.3 W

Not Qualified

FET General Purpose Power

YES

GULL WING

DUAL

SWITCHING

SILICON

FDR6580 by Fairchild Semiconductor

FDR6580

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE;

SINGLE WITH BUILT-IN DIODE

20 V

11 A

11.2 A

.009 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.8 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

FDR8521L by Fairchild Semiconductor

FDR8521L

Fairchild Semiconductor

FDR8521L by Fairchild Semiconductor is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in Enhancement Mode for switching applications, with max ID of 2.9A and RDS(on) of 0.07 ohm. This rectangular package has Gull Wing terminals and is surface mountable.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

2.9 A

.07 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

2

8

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL AND P-CHANNEL

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

FDR6674A by Fairchild Semiconductor

FDR6674A

Fairchild Semiconductor

FDR6674A by Fairchild Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 11.5A Drain Current, 0.008 ohm On Resistance, and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has a max power dissipation of 1.8W and can withstand temperatures up to 150°C.

SINGLE WITH BUILT-IN DIODE

30 V

11.5 A

11.5 A

.008 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.8 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

FDC5614PD87Z by Fairchild Semiconductor

FDC5614PD87Z

Fairchild Semiconductor

FDC5614PD87Z by Fairchild Semiconductor is a P-CHANNEL FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 3A. The transistor operates in enhancement mode and has a max power dissipation of 1.6W at a max operating temperature of 150°C.

SINGLE WITH BUILT-IN DIODE

60 V

3 A

3 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.6 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

SWITCHING

SILICON

FDV304PD87Z by Fairchild Semiconductor

FDV304PD87Z

Fairchild Semiconductor

Fairchild Semiconductor's FDV304PD87Z is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.46A ID, and 1.1 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. The SMALL OUTLINE package features GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.

SINGLE WITH BUILT-IN DIODE

25 V

.46 A

.46 A

1.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.35 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

2N5457_D74Z by Fairchild Semiconductor

2N5457_D74Z

Fairchild Semiconductor

2N5457_D74Z by Fairchild Semiconductor is a N-CHANNEL FET with DEPLETION MODE operation. It has a max power dissipation of 0.31W and a max operating temperature of 150°C. Ideal for SWITCHING applications due to its low feedback capacitance of 3pF.

SINGLE

JUNCTION

3 pF

TO-92

O-PBCY-T3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

.31 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

FDC6000NZ_F077 by Fairchild Semiconductor

FDC6000NZ_F077

Fairchild Semiconductor

Fairchild Semiconductor's FDC6000NZ_F077 is a N-CHANNEL FET with 20V DS Breakdown Voltage, 7.3A ID, and 0.02 ohm RDS(on). Ideal for SWITCHING applications, it features a PLASTIC/EPOXY package, ENHANCEMENT MODE operation, and dual elements with built-in diode.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

7.3 A

7.3 A

.02 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e4

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.8 W

Not Qualified

FET General Purpose Power

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

FLAT

DUAL

SWITCHING

SILICON

IRFM210BTF_FP001 by Fairchild Semiconductor

IRFM210BTF_FP001

Fairchild Semiconductor

Fairchild Semiconductor's IRFM210BTF_FP001 is a N-CHANNEL FET with 200V DS breakdown voltage, ideal for SWITCHING applications. It features 0.77A max drain current, 1.5 ohm max on resistance, and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 2W power dissipation at 150°C.

DRAIN

SINGLE WITH BUILT-IN DIODE

200 V

.77 A

.77 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

9 pF

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

2 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

FDS2672_F085 by Fairchild Semiconductor

FDS2672_F085

Fairchild Semiconductor

FDS2672_F085 by Fairchild Semiconductor is a N-CHANNEL FET for SWITCHING applications. It features a 200V DS Breakdown Voltage, 3.9A Drain Current, and 0.07 ohm On Resistance. With an operating temperature of up to 150°C, it comes in a PLASTIC/EPOXY package with GULL WING terminals.

SINGLE WITH BUILT-IN DIODE

200 V

3.9 A

3.9 A

.07 ohm

METAL-OXIDE SEMICONDUCTOR

45 pF

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.5 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

FDS6673BZ_F085 by Fairchild Semiconductor

FDS6673BZ_F085

Fairchild Semiconductor

FDS6673BZ_F085 by Fairchild Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage and 14.5A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0078 ohm On Resistance, and operates in ENHANCEMENT MODE at up to 150°C.

SINGLE WITH BUILT-IN DIODE

30 V

14.5 A

14.5 A

.0078 ohm

METAL-OXIDE SEMICONDUCTOR

900 pF

R-PDSO-G8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.5 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

30

SWITCHING

SILICON

FDS4770 by Fairchild Semiconductor

FDS4770

Fairchild Semiconductor

FDS4770 by Fairchild Semiconductor is a N-CHANNEL FET with a min DS Breakdown Voltage of 40V. It is used for SWITCHING applications and has a max Drain Current (ID) of 13.2A.

SINGLE WITH BUILT-IN DIODE

40 V

13.2 A

13.2 A

.0075 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

2.5 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

FDC6000NZ by Fairchild Semiconductor

FDC6000NZ

Fairchild Semiconductor

FDC6000NZ by Fairchild Semiconductor is a N-CHANNEL FET with 2 elements and built-in diode for SWITCHING applications. Features include 20V DS Breakdown Voltage, 6.5A Max Drain Current, and 0.02 ohm Max RDS(ON). Operates in ENHANCEMENT MODE with a max temp of 150°C, suitable for surface mount with small outline package style.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

6.5 A

7.3 A

.02 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e4

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.6 W

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

FLAT

DUAL

SWITCHING

SILICON

NDS0610_NL by Fairchild Semiconductor

NDS0610_NL

Fairchild Semiconductor

NDS0610_NL by Fairchild Semiconductor is a P-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 0.12A Drain Current, and 10 ohm On Resistance. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150°C.

SINGLE WITH BUILT-IN DIODE

60 V

.12 A

.12 A

10 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

.36 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

FDG6332C_F085 by Fairchild Semiconductor

FDG6332C_F085

Fairchild Semiconductor

FDG6332C_F085 by Fairchild Semiconductor is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It's used for switching applications in enhancement mode, with max drain current of 0.7A and on-resistance of 0.3Ω. The package is SOT-23 style, surface mountable, operating up to 150°C.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

.7 A

.7 A

.3 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON