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1.5 W Small Signal Field Effect Transistors (FET) 10

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2SJ360(TE12L,F) by Toshiba

2SJ360(TE12L,F)

Toshiba

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Minimum DS Breakdown Voltage: 60 V; Maximum Drain Current (ID): 1 A;

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

1 A

1 A

1.2 ohm

METAL-OXIDE SEMICONDUCTOR

TO-243AA

R-PSSO-F3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

1.5 W

Other Transistors

YES

FLAT

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NTMD5836NLR2G by Onsemi

NTMD5836NLR2G

Onsemi

NTMD5836NLR2G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 9A Drain Current, and 0.0308 ohm On Resistance. It is used in applications requiring high power dissipation up to 1.5W, operating at temperatures up to 150 °C. Ideal for surface mount designs due to its GULL WING terminals and SMALL OUTLINE package style.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

9 A

5.7 A

.0308 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.5 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SILICON

STC5NF30V by STMicroelectronics

STC5NF30V

STMicroelectronics

STC5NF30V by STMicroelectronics is an N-channel FET designed for switching applications. It features a max drain current of 5 A, a breakdown voltage of 30 V, and operates in enhancement mode. Ideal for compact designs with its surface mount configuration.

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

5 A

5 A

.035 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.5 W

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON

CSD25301W1015 by Texas Instruments

CSD25301W1015

Texas Instruments

CSD25301W1015 by Texas Instruments is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.2A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package, suitable for surface mount assembly at temperatures up to 150°C.

SINGLE WITH BUILT-IN DIODE

20 V

2.2 A

2.2 A

.22 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

R-PBGA-B6

e1

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY

260

P-CHANNEL

1.5 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

BALL

BOTTOM

30

SWITCHING

SILICON

NTVS3141PT2G by Onsemi

NTVS3141PT2G

Onsemi

NTVS3141PT2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 3.7A and 0.2 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150 °C. This RECTANGULAR GRID ARRAY package has 6 terminals with BALL form, suitable for surface mount designs.

SINGLE WITH BUILT-IN DIODE

20 V

3.7 A

2.9 A

.2 ohm

METAL-OXIDE SEMICONDUCTOR

R-PBGA-B6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY

P-CHANNEL

1.5 W

Not Qualified

Other Transistors

YES

MATTE TIN

BALL

BOTTOM

SWITCHING

SILICON

2SK2963(TE12L,F) by Toshiba

2SK2963(TE12L,F)

Toshiba

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 1 A;

SINGLE

1 A

1 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

N-CHANNEL

1.5 W

FET General Purpose Power

YES

DMP2036UVT-13 by Diodes Incorporated

DMP2036UVT-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Minimum Operating Temperature: -55 Cel; Terminal Position: DUAL;

SINGLE WITH BUILT-IN DIODE

20 V

6 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

117 pF

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.5 W

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMP2036UVT-7 by Diodes Incorporated

DMP2036UVT-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; JESD-609 Code: e3; Maximum Feedback Capacitance (Crss): 117 pF;

SINGLE WITH BUILT-IN DIODE

20 V

6 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

117 pF

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.5 W

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMT4031LSD-13 by Diodes Incorporated

DMT4031LSD-13

Diodes Incorporated

DMT4031LSD-13 by Diodes Inc. is a N-channel FET with 40V DS breakdown voltage, 36A IDM, and 0.023 ohm RDS(on). Ideal for switching applications, it features separate elements with built-in diode in a small outline package suitable for surface mount technology. Operating from -55 to 150 °C, this MOSFET offers high power dissipation of 1.5W and peak reflow temp of 260C.

7.6 mJ

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

6.3 A

.023 ohm

METAL-OXIDE SEMICONDUCTOR

20 pF

R-PDSO-G8

e3

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.5 W

36 A

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMP2065U-13 by Diodes Incorporated

DMP2065U-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;

SINGLE WITH BUILT-IN DIODE

20 V

4 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

77 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.5 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON