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70 MHz Small Signal Bipolar Junction Transistors (BJT) 9

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
PZTA42E6327HTSA1 by Infineon Technologies

PZTA42E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70 MHz; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

.5 A

300 V

SINGLE

40

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

GULL WING

DUAL

SILICON

70 MHz

BFN18E6327HTSA1 by Infineon Technologies

BFN18E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;

COLLECTOR

.2 A

300 V

SINGLE

30

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

FLAT

SINGLE

SWITCHING

SILICON

70 MHz

2SB1184TLQ by ROHM

2SB1184TLQ

ROHM

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A;

3 A

50 V

SINGLE

120

R-PSSO-G2

e2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

15 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn98Cu2)

GULL WING

SINGLE

10

SWITCHING

SILICON

70 MHz

2PB709AR,115 by NXP Semiconductors

2PB709AR,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

5 pF

45 V

SINGLE

210

TO-236

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

70 MHz

.5 V

BSP19AT1G by Onsemi

BSP19AT1G

Onsemi

BSP19AT1G by Onsemi is a NPN BJT transistor for switching applications. It has a max collector-emitter voltage of 350V, max power dissipation of 1.5W, and min DC current gain of 40. With a package style of small outline and surface mount capability, it is ideal for compact electronic devices requiring high-speed switching capabilities.

COLLECTOR

.1 A

350 V

SINGLE

40

TO-261AA

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.5 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

70 MHz

MMBTA42LT1HTSA1 by Infineon Technologies

MMBTA42LT1HTSA1

Infineon Technologies

Infineon's MMBTA42LT1HTSA1 is a NPN BJT transistor with hFE of 40, VCE of 300V, and IC of 0.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and fT of 70MHz.

.5 A

300 V

SINGLE

40

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

SILICON

70 MHz

2N1711PBFREE by Central Semiconductor

2N1711PBFREE

Central Semiconductor

2N1711PBFREE by Central Semiconductor is a NPN BJT transistor with VCEsat of 1.5V, hFE of 40, and IC of 0.5A. Ideal for switching applications due to its high transition frequency of 70MHz and max power dissipation of 3W in a cylindrical package.

.5 A

25 pF

SINGLE

40

TO-39

O-MBCY-W3

e3

1

3

200 Cel

-65 Cel

METAL

ROUND

CYLINDRICAL

NPN

.8 W

3 W

NO

MATTE TIN OVER NICKEL

WIRE

BOTTOM

SWITCHING

SILICON

70 MHz

1.5 V

BFN18H6327XTSA1 by Infineon Technologies

BFN18H6327XTSA1

Infineon Technologies

Infineon's BFN18H6327XTSA1 is a NPN BJT transistor for switching applications. With max. VCE of 300V, IC of 0.2A, and hFE of 30, it operates at up to 150°C. This surface-mount device in a small outline package is ideal for high-frequency switching circuits.

COLLECTOR

.2 A

300 V

SINGLE

30

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

FLAT

SINGLE

SWITCHING

SILICON

70 MHz

BFN26E6433HTMA1 by Infineon Technologies

BFN26E6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70 MHz; Maximum Collector Current (IC): .2 A; Transistor Application: SWITCHING;

.2 A

300 V

SINGLE

30

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

70 MHz