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260 MHz Small Signal Bipolar Junction Transistors (BJT) 9

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
UMF6NTR by ROHM

UMF6NTR

ROHM

ROHM's UMF6NTR is a PNP BJT transistor with 270 min hFE, 260 MHz fT, and 0.5 A IC. Ideal for switching applications, it has a max operating temperature of 150°C and a package style of small outline.

BUILT IN 2SA2018 AND 2SK3019

.5 A

12 V

SINGLE WITH BUILT-IN FET AND DIODE

270

R-PDSO-G6

e2

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN COPPER

GULL WING

DUAL

SWITCHING

SILICON

260 MHz

BC327-016 by Onsemi

BC327-016

Onsemi

BC327-016 by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, max collector current of 0.8A, and min DC current gain of 100. With a package style of cylindrical and max power dissipation of 0.625W, it operates at up to 150 °C.

.8 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

260 MHz

BC327-040 by Onsemi

BC327-040

Onsemi

BC327-040 by Onsemi is a PNP BJT transistor with hFE of 250, IC of 0.8A, and fT of 260MHz. Ideal for amplifier applications due to its max power dissipation of 0.625W and collector-emitter voltage of 45V. This through-hole transistor has a cylindrical package shape made from silicon material.

.8 A

45 V

SINGLE

250

TO-92

O-PBCY-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

260 MHz

BC327-40ZL1G by Onsemi

BC327-40ZL1G

Onsemi

BC327-40ZL1G by Onsemi is a PNP BJT transistor with hFE of 250, VCEO of 45V, and IC of 0.8A. Ideal for amplifier applications due to its high transition frequency of 260MHz and max power dissipation of 0.625W in a cylindrical package. Operating temperature ranges from -55 to 150°C making it suitable for various electronic designs.

EUROPEAN PART NUMBER

.8 A

45 V

SINGLE

250

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

260 MHz

BC327-16ZL1G by Onsemi

BC327-16ZL1G

Onsemi

BC327-16ZL1G by Onsemi is a PNP BJT transistor with a max collector-emitter voltage of 45V and max current of 0.8A. Ideal for amplifier applications, it has a min DC current gain of 100 and operates up to 150 °C. Its package style is cylindrical with through-hole terminals.

EUROPEAN PART NUMBER

.8 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

260 MHz

BC327-25ZL1G by Onsemi

BC327-25ZL1G

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 260 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A;

EUROPEAN PART NUMBER

.8 A

45 V

SINGLE

160

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

260 MHz

BC327RL1G by Onsemi

BC327RL1G

Onsemi

BC327RL1G by Onsemi is a PNP BJT transistor with hFE of 100, IC of 0.8A, and VCE of 45V. Ideal for amplifier applications due to its cylindrical package style and max operating temperature of 150 °C. Its silicon element material ensures reliable performance in various electronic circuits.

EUROPEAN PART NUMBER

.8 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

AMPLIFIER

SILICON

260 MHz

DSS4220V-7 by Diodes Incorporated

DSS4220V-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 260 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 2 A;

2 A

20 V

SINGLE

120

R-PDSO-F6

e3

1

1

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.6 W

.6 W

Not Qualified

YES

MATTE TIN

FLAT

DUAL

30

SILICON

260 MHz

.35 V

2DA2018-7 by Diodes Incorporated

2DA2018-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 260 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .5 A;

.5 A

12 V

SINGLE

270

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

260 MHz