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190 MHz Small Signal Bipolar Junction Transistors (BJT) 10

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
FMMT720-7 by Diodes Incorporated

FMMT720-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 1.5 A;

1.5 A

25 pF

40 V

SINGLE

12

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.625 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

190 MHz

.33 V

BCR198SH6327XTSA1 by Infineon Technologies

BCR198SH6327XTSA1

Infineon Technologies

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

190 MHz

MAT03EHZ by Analog Devices

MAT03EHZ

Analog Devices

MAT03EHZ by Analog Devices is a PNP BJT with 2 elements and built-in diode. It has a max VCEsat of 0.1V, hFE of 100, and operates up to 150 °C. Ideal for amplifier applications due to its high transition frequency of 190MHz and low collector-emitter voltage of 36V.

LOW NOISE

.02 A

36 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

100

TO-78

O-MBCY-W6

e4

2

6

150 Cel

METAL

ROUND

CYLINDRICAL

PNP

Not Qualified

NO

GOLD

WIRE

BOTTOM

AMPLIFIER

SILICON

190 MHz

.1 V

MAT03FHZ by Analog Devices

MAT03FHZ

Analog Devices

MAT03FHZ by Analog Devices is a PNP BJT with 2 elements and built-in diode. It has a VCEsat of 0.1V, hFE of 80, and operates up to 150 °C. Ideal for amplifier applications due to its high transition frequency of 190MHz and low collector-emitter voltage of 36V.

LOW NOISE

.02 A

36 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

80

TO-78

O-MBCY-W6

e4

2

6

150 Cel

METAL

ROUND

CYLINDRICAL

PNP

Not Qualified

NO

GOLD

WIRE

BOTTOM

AMPLIFIER

SILICON

190 MHz

.1 V

2DB1132P-13 by Diodes Incorporated

2DB1132P-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

32 V

SINGLE

82

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

190 MHz

2DB1132Q-13 by Diodes Incorporated

2DB1132Q-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

32 V

SINGLE

120

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

190 MHz

SS9015ABU by Fairchild Semiconductor

SS9015ABU

Fairchild Semiconductor

SS9015ABU by Fairchild Semiconductor is a PNP BJT transistor with 3 terminals. It has a max power dissipation of 0.45W, hFE of 60, and fT of 190MHz. Ideal for amplifier applications due to its max collector-emitter voltage of 45V and max collector current of 0.1A.

LOW NOISE

.1 A

45 V

SINGLE

60

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.45 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

190 MHz

SSM2220PZ by Analog Devices

SSM2220PZ

Analog Devices

SSM2220PZ by Analog Devices is a PNP BJT with 2 elements and built-in diode, ideal for amplifier applications. It has a min hFE of 80, max operating temp of 150 °C, and max VCE of 36V. The transistor's package style is in-line with through-hole terminals and a transition frequency of 190MHz.

LOW NOISE

.02 A

36 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

80

R-PDIP-T8

e3

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

DUAL

AMPLIFIER

SILICON

190 MHz

SSM2220SZ-REEL by Analog Devices

SSM2220SZ-REEL

Analog Devices

Analog Devices' SSM2220SZ-REEL is a PNP BJT with 2 elements, built-in diode, and hFE of 80. Ideal for amplifier applications, it operates up to 150°C with VCE max of 36V. This surface-mount transistor has a package style of SOIC-8 and fT of 190MHz.

LOW NOISE

.02 A

36 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

80

R-PDSO-G8

e3

1

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

190 MHz

SSM2220SZ by Analog Devices

SSM2220SZ

Analog Devices

Analog Devices' SSM2220SZ is a PNP BJT with 2 elements and built-in diode, ideal for amplifier applications. With a max operating temp of 150 °C, it offers hFE of 80 and VCE of 36V. This surface-mount transistor has a transition frequency of 190MHz in a small outline package.

LOW NOISE

.02 A

36 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

80

R-PDSO-G8

e3

1

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

190 MHz