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160 MHz Small Signal Bipolar Junction Transistors (BJT) 13

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BCR116E6433HTMA1 by Infineon Technologies

BCR116E6433HTMA1

Infineon Technologies

Infineon's BCR116E6433HTMA1 is a NPN BJT with built-in resistor for switching applications. It features hFE of 70, VCE of 50V, and fT of 160MHz. This small outline transistor in plastic/epoxy package with gull wing terminals is ideal for surface mount designs.

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

160 MHz

BCR166E6327HTSA1 by Infineon Technologies

BCR166E6327HTSA1

Infineon Technologies

BCR166E6327HTSA1 by Infineon is a PNP BJT transistor with built-in resistor for switching applications. It has a min DC current gain of 70 and can handle a max collector-emitter voltage of 50V. With a nominal transition frequency of 160MHz, this surface-mount transistor comes in a small outline package ideal for compact designs.

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

160 MHz

BCR166E6433HTMA1 by Infineon Technologies

BCR166E6433HTMA1

Infineon Technologies

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

160 MHz

2DD2150R-13 by Diodes Incorporated

2DD2150R-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

20 V

SINGLE

180

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

160 MHz

2PD602AR,115 by NXP Semiconductors

2PD602AR,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL;

.5 A

15 pF

50 V

SINGLE

40

TO-236

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

160 MHz

.6 V

KSD1616GTA by Fairchild Semiconductor

KSD1616GTA

Fairchild Semiconductor

KSD1616GTA by Fairchild Semiconductor is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 0.75W and can handle a max collector-emitter voltage of 50V. With a min DC current gain of 200 and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.

1 A

50 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.75 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

160 MHz

KSD1616LBU by Fairchild Semiconductor

KSD1616LBU

Fairchild Semiconductor

KSD1616LBU by Fairchild Semiconductor is a NPN BJT transistor with 1A max collector current, 300 min DC current gain, and 160MHz transition frequency. It is commonly used for switching applications due to its 0.75W power dissipation, 50V max collector-emitter voltage, and -55 to +150°C operating temperature range.

1 A

50 V

SINGLE

300

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.75 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

160 MHz

KSD1616YTA by Fairchild Semiconductor

KSD1616YTA

Fairchild Semiconductor

Fairchild Semiconductor's KSD1616YTA is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 0.75W, hFE of 135, and fT of 160MHz. With a max collector-emitter voltage of 50V and operating temp up to 150°C, it suits various electronic designs requiring high-speed switching capabilities in compact cylindrical packages.

1 A

50 V

SINGLE

135

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.75 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

160 MHz

MPSA18RLRPG by Onsemi

MPSA18RLRPG

Onsemi

MPSA18RLRPG by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 45V and max current of 0.2A, ideal for amplifier applications. It has a min DC current gain of 500 and operates at temperatures up to 150 °C, featuring a cylindrical package style with through-hole terminals.

LOW NOISE

.2 A

45 V

SINGLE

500

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

160 MHz

MPSA18G by Onsemi

MPSA18G

Onsemi

MPSA18G by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 45V and max current of 0.2A. With a min DC current gain of 500, it's ideal for amplifier applications. This through-hole transistor has a max power dissipation of 0.625W and operates up to 150 °C.

LOW NOISE

.2 A

45 V

SINGLE

500

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

160 MHz

MPSA18RLRMG by Onsemi

MPSA18RLRMG

Onsemi

MPSA18RLRMG by Onsemi is a NPN BJT transistor with 500 min hFE, 45V VCEO, and 160MHz fT. Ideal for amplifier applications due to its 0.2A IC, 0.625W Pdiss, and cylindrical package style. Suitable for through-hole mounting with bottom terminal position.

LOW NOISE

.2 A

45 V

SINGLE

500

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

160 MHz

2DA1213O-13 by Diodes Incorporated

2DA1213O-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

50 V

SINGLE

20

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

160 MHz

BCR166WE6327HTSA1 by Infineon Technologies

BCR166WE6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

160 MHz