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.6 W Small Signal Bipolar Junction Transistors (BJT) 15

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2SC2909S-AA by Onsemi

2SC2909S-AA

Onsemi

2SC2909S-AA by Onsemi is a NPN BJT transistor for switching applications. It has a low VCEsat of 0.3V, hFE of 140, and can handle up to 160V. With a max power dissipation of 0.6W, it operates at temperatures up to 150°C.

.07 A

2 pF

160 V

SINGLE

140

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.6 W

.6 W

NO

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

150 MHz

.3 V

NTE159 by Nte Electronics

NTE159

Nte Electronics

NTE159 by Nte Electronics is a PNP BJT transistor with max. power dissipation of 0.6W, hFE of 30, and VCE of 80V. Ideal for switching applications due to its fast turn-on/off times (ton: 100ns, toff: 400ns) and high collector current (IC: 1A).

LOW NOISE

1 A

80 V

SINGLE

30

TO-92

O-PBCY-W3

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

.6 W

Not Qualified

Other Transistors

NO

WIRE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

400 ns

100 ns

PN4249D74Z by Fairchild Semiconductor

PN4249D74Z

Fairchild Semiconductor

Fairchild Semiconductor's PN4249D74Z is a PNP BJT transistor with 3 terminals. It has a max power dissipation of 0.6W and can handle up to 0.5A collector current. Ideal for switching applications, it operates at temperatures up to 150°C in a round package with matte tin finish.

.5 A

60 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.6 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

PMEM4010ND,115 by NXP Semiconductors

PMEM4010ND,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;

1 A

40 V

SINGLE WITH BUILT-IN DIODE

200

R-PDSO-G6

e3

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

PMEM4010PD,115 by NXP Semiconductors

PMEM4010PD,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;

1 A

40 V

SINGLE WITH BUILT-IN DIODE

160

R-PDSO-G6

e3

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

PMEM4020AND,115 by NXP Semiconductors

PMEM4020AND,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .95 A;

.95 A

40 V

SINGLE WITH BUILT-IN DIODE

200

R-PDSO-G6

e3

1

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

DPLS320A-7 by Diodes Incorporated

DPLS320A-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 215 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 2 A;

HIGH RELIABILITY

2 A

20 V

SINGLE

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

215 MHz

DNLS320A-7 by Diodes Incorporated

DNLS320A-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 2 A;

HIGH RELIABILITY

2 A

20 V

SINGLE

150

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

220 MHz

NSVDTC144TM3T5G by Onsemi

NSVDTC144TM3T5G

Onsemi

NSVDTC144TM3T5G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a min hFE of 120, max VCE of 50V, and max IC of 0.1A. This small outline package with matte tin finish is ideal for automotive electronics meeting AEC-Q101 standard.

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

120

R-PDSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.6 W

AEC-Q101

BIP General Purpose Small Signal

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

2N4401-AP by Micro Commercial Components

2N4401-AP

Micro Commercial Components

2N4401-AP by Micro Commercial Components is a NPN BJT transistor with max. collector-emitter voltage of 40V, min. DC current gain of 40, and transition frequency of 250MHz. Ideal for amplifier applications due to its single configuration and cylindrical package style with through-hole terminals.

40 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.6 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

10

AMPLIFIER

SILICON

250 MHz

255 ns

35 ns

DTC144WM3T5G by Onsemi

DTC144WM3T5G

Onsemi

DTC144WM3T5G by Onsemi is a NPN BJT transistor with built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V and can handle a max collector current of 0.1A. With a small outline package style and operating temperature up to 150 °C, it is suitable for surface mount designs requiring compact components.

BUILT-IN BIAS RESISTOR RATIO IS 2.1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.6 W

Not Qualified

BIP General Purpose Small Signal

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

40

SWITCHING

SILICON

PMEM4020APD,115 by NXP Semiconductors

PMEM4020APD,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1.3 A;

1.3 A

40 V

SINGLE WITH BUILT-IN DIODE

50

R-PDSO-G6

e3

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

DSS4140V-7 by Diodes Incorporated

DSS4140V-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;

1 A

40 V

SINGLE

75

R-PDSO-F6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SILICON

150 MHz

DSS4220V-7 by Diodes Incorporated

DSS4220V-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 260 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 2 A;

2 A

20 V

SINGLE

120

R-PDSO-F6

e3

1

1

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.6 W

.6 W

Not Qualified

YES

MATTE TIN

FLAT

DUAL

30

SILICON

260 MHz

.35 V

DSS5140V-7 by Diodes Incorporated

DSS5140V-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;

1 A

40 V

SINGLE

160

R-PDSO-F6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SILICON

150 MHz