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.36 W Small Signal Bipolar Junction Transistors (BJT) 7

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BCV27E6327HTSA1 by Infineon Technologies

BCV27E6327HTSA1

Infineon Technologies

BCV27E6327HTSA1 by Infineon Technologies is a NPN Darlington transistor with 4000 min hFE, 30V VCEO, and 170MHz fT. Ideal for small signal applications in electronics due to its high DC current gain and low power dissipation of 0.36W. Suitable for surface mount designs with a compact rectangular package style.

.5 A

30 V

DARLINGTON

4000

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.36 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

SILICON

170 MHz

MPS2369AG by Onsemi

MPS2369AG

Onsemi

MPS2369AG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 15V and max collector current of 0.2A. With a transition frequency of 500MHz, it's suitable for high-speed circuit designs.

.2 A

15 V

SINGLE

20

TO-92

O-PBCY-T3

e1

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.36 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

500 MHz

18 ns

12 ns

MPS2907ARL1G by Onsemi

MPS2907ARL1G

Onsemi

MPS2907ARL1G by Onsemi is a PNP BJT with max. power dissipation of 0.36W, hFE of 100, and max. operating temp of 150 °C. Ideal for applications requiring a small signal transistor with a collector-emitter voltage of 60V, such as amplifiers or switching circuits due to its high transition frequency of 200MHz.

.6 A

60 V

SINGLE

100

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.36 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

200 MHz

100 ns

45 ns

MPS2907ARLREG by Onsemi

MPS2907ARLREG

Onsemi

MPS2907ARLREG by Onsemi is a PNP BJT with hFE of 100, VCEO of 60V, and IC of 0.6A. Ideal for applications requiring fast switching such as signal amplification in electronic circuits. Package style: cylindrical, terminal finish: tin silver copper, and max operating temp: 150 °C make it versatile for various designs.

.6 A

60 V

SINGLE

100

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.36 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

200 MHz

100 ns

45 ns

MPS2369ARLRPG by Onsemi

MPS2369ARLRPG

Onsemi

MPS2369ARLRPG by Onsemi is a NPN BJT transistor with 3 terminals and max power dissipation of 0.36W. It has a min DC current gain of 20, max collector-emitter voltage of 15V, and nominal transition frequency of 500MHz. Ideal for switching applications due to its fast turn on/off times (ton: 12ns, toff: 18ns) and peak reflow temp of 260 °C.

.2 A

15 V

SINGLE

20

TO-92

O-PBCY-T3

e1

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.36 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

500 MHz

18 ns

12 ns

MPS2907ARLRMG by Onsemi

MPS2907ARLRMG

Onsemi

MPS2907ARLRMG by Onsemi is a PNP BJT transistor for switching applications. It has a max collector-emitter voltage of 60V, DC current gain of 100, and transition frequency of 200MHz. With a power dissipation of 0.36W, it operates at up to 150 °C making it suitable for various electronic circuits.

.6 A

60 V

SINGLE

100

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.36 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

200 MHz

100 ns

45 ns

MPS2907AZL1G by Onsemi

MPS2907AZL1G

Onsemi

MPS2907AZL1G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.36W, hFE of 100, and max. collector-emitter voltage of 60V. Ideal for switching applications due to its fast turn on/off times (45ns/100ns) and high transition frequency (200MHz).

EUROPEAN PART NUMBER

.6 A

60 V

SINGLE

100

TO-92

O-PBCY-W3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.36 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

WIRE

BOTTOM

SWITCHING

SILICON

200 MHz

100 ns

45 ns