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.7 A Small Signal Bipolar Junction Transistors (BJT) 4

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MMBT2132T3G by Onsemi

MMBT2132T3G

Onsemi

MMBT2132T3G by Onsemi is a NPN BJT with 30V VCEO, 0.7A IC, and hFE of 150. Ideal for small signal amplification in electronic circuits due to its high gain and low power dissipation capabilities. Its GULL WING terminals make it suitable for surface mount applications where space is limited.

.7 A

30 V

SINGLE

150

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.342 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SILICON

2SCR514PT100 by ROHM

2SCR514PT100

ROHM

ROHM 2SCR514PT100 is a NPN BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 0.7A. It has a min. DC current gain of 120, suitable for switching applications in small outline packages at up to 150°C operating temperature.

COLLECTOR

.7 A

80 V

SINGLE

120

R-PSSO-F3

e2

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

SINGLE

10

SWITCHING

SILICON

320 MHz

MCH5541-TL-E by Onsemi

MCH5541-TL-E

Onsemi

MCH5541-TL-E by Onsemi is a Small Signal BJT with NPN and PNP channels. It features 0.5W power dissipation, 200 min hFE, and 0.7A max collector current. Ideal for applications requiring surface mount technology in environments up to 150 °C.

.7 A

200

e6

1

150 Cel

NPN AND PNP

.5 W

BIP General Purpose Small Signal

YES

Tin/Bismuth (Sn/Bi)

2SCR372P5T100R by ROHM

2SCR372P5T100R

ROHM

ROHM 2SCR372P5T100R is a NPN BJT transistor with hFE of 180, suitable for amplifier applications. It has a max VCE of 120V and IC of 0.7A. With a fT of 220MHz, it operates up to 150°C making it ideal for high-frequency amplification in compact designs.

COLLECTOR

.7 A

120 V

SINGLE

180

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

TIN

FLAT

SINGLE

10

AMPLIFIER

SILICON

220 MHz