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.07 A Small Signal Bipolar Junction Transistors (BJT) 32

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BCR146F-E6327 by Infineon Technologies

BCR146F-E6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Minimum DC Current Gain (hFE): 50; No. of Elements: 1;

.07 A

50

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR149T-E6327 by Infineon Technologies

BCR149T-E6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON; No. of Elements: 1;

.07 A

120

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR199T-E6327 by Infineon Technologies

BCR199T-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; No. of Elements: 1; Transistor Element Material: SILICON;

.07 A

120

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR196F-E6327 by Infineon Technologies

BCR196F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 50;

.07 A

50

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR196T-E6327 by Infineon Technologies

BCR196T-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Minimum DC Current Gain (hFE): 50; Transistor Element Material: SILICON;

.07 A

50

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR198F-E6327 by Infineon Technologies

BCR198F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;

.07 A

70

1

1

260

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

2SC2909S-AA by Onsemi

2SC2909S-AA

Onsemi

2SC2909S-AA by Onsemi is a NPN BJT transistor for switching applications. It has a low VCEsat of 0.3V, hFE of 140, and can handle up to 160V. With a max power dissipation of 0.6W, it operates at temperatures up to 150°C.

.07 A

2 pF

160 V

SINGLE

140

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.6 W

.6 W

NO

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

150 MHz

.3 V

DDA114YUQ-7-F by Diodes Incorporated

DDA114YUQ-7-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON; Peak Reflow Temperature (C): 260;

.07 A

68

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

BCR148E6327HTSA1 by Infineon Technologies

BCR148E6327HTSA1

Infineon Technologies

Infineon's BCR148E6327HTSA1 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 70, VCE of 50V, and IC of 0.07A. With a max temp of 150°C, this silicon transistor in gull wing package is ideal for high-frequency switching circuits.

BUILT-IN BIAS RESISTOR RATIO IS 1

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCR148E6433HTMA1 by Infineon Technologies

BCR148E6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .07 A; Transistor Application: SWITCHING;

BUILT-IN BIAS RESISTOR RATIO IS 1

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCR48PNH6327XTSA1 by Infineon Technologies

BCR48PNH6327XTSA1

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .07 A; Transistor Application: SWITCHING;

BUILT-IN BIAS RESISTOR RATIO 1

.07 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

DTA114YCAT116 by ROHM

DTA114YCAT116

ROHM

ROHM DTA114YCAT116 is a PNP BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.07A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at max temp of 150°C with peak reflow temp of 260°C, making it suitable for high-frequency operations up to 250MHz.

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

YES

GULL WING

DUAL

10

SWITCHING

SILICON

250 MHz

.3 V

DDTA114YCA-7 by Diodes Incorporated

DDTA114YCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .07 A; Terminal Finish: Tin/Lead (Sn85Pb15);

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

Not Qualified

YES

Tin/Lead (Sn85Pb15)

GULL WING

DUAL

10

SILICON

250 MHz

DDTA114YUA-7 by Diodes Incorporated

DDTA114YUA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .07 A; Package Shape: RECTANGULAR;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC114YCA-7 by Diodes Incorporated

DDTC114YCA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .07 A; Terminal Position: DUAL;

BUILT-IN BIAS RESISTANCE RATIO IS 4.7

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DCX114YU-7 by Diodes Incorporated

DCX114YU-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .07 A; Maximum Collector-Emitter Voltage: 50 V;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.07 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDA114YU-7 by Diodes Incorporated

DDA114YU-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .07 A; Terminal Position: DUAL;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.07 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDC114YU-7 by Diodes Incorporated

DDC114YU-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .07 A; No. of Elements: 2;

BUILT-IN BIAS RESISTANCE RATIO IS 4.7

.07 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC114YE-7 by Diodes Incorporated

DDTC114YE-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .07 A; No. of Terminals: 3;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDA114YH-7 by Diodes Incorporated

DDA114YH-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .07 A;

BUILT-IN BIAS RESISTOR RATIO 4.7

.07 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

FLAT

DUAL

30

SILICON

250 MHz

DDTA114YKA-7-F by Diodes Incorporated

DDTA114YKA-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .07 A;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DCX114YK-7-F by Diodes Incorporated

DCX114YK-7-F

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .07 A;

BUILT IN BIAS RESISTOR RATIO IS 4.7

.07 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.3 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

DDTA114YE-7-F by Diodes Incorporated

DDTA114YE-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .07 A;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC114YKA-7-F by Diodes Incorporated

DDTC114YKA-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .07 A;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

BCR146L3E6327 by Infineon Technologies

BCR146L3E6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON; No. of Elements: 1;

.07 A

50

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR199L3E6327 by Infineon Technologies

BCR199L3E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; No. of Elements: 1; Transistor Element Material: SILICON;

.07 A

120

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR196L3E6327 by Infineon Technologies

BCR196L3E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; No. of Elements: 1; Transistor Element Material: SILICON;

.07 A

50

1

1

260

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR149L3E6327 by Infineon Technologies

BCR149L3E6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON; No. of Elements: 1;

.07 A

120

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR08PNH6433XTMA1 by Infineon Technologies

BCR08PNH6433XTMA1

Infineon Technologies

Infineon's BCR08PNH6433XTMA1 is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements with built-in resistors in a rectangular package with gull wing terminals. With a max collector-emitter voltage of 50V and max collector current of 0.07A, it offers high performance in a compact small outline package.

BUILT-IN BIAS RESISTOR RATIO 1

.07 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCR48PNH6433XTMA1 by Infineon Technologies

BCR48PNH6433XTMA1

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .07 A; Terminal Form: GULL WING;

BUILT-IN BIAS RESISTOR RATIO 1

.07 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCR08PNH6727XTSA1 by Infineon Technologies

BCR08PNH6727XTSA1

Infineon Technologies

BCR08PNH6727XTSA1 by Infineon Technologies is a Small Signal BJT with NPN and PNP channels. It features 2 elements with built-in resistor for switching applications. This transistor has a max collector-emitter voltage of 50V, DC current gain of 70, and can handle a collector current of 0.07A.

BUILT-IN BIAS RESISTOR RATIO 1

.07 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BCR48PNH6727 by Infineon Technologies

BCR48PNH6727

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .07 A; Package Style (Meter): SMALL OUTLINE;

BUILT-IN BIAS RESISTOR RATIO 1

.07 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz