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NXP Semiconductors RF Small Signal Field Effect Transistors (FET) 54

RF Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
PMBFJ310,215 by NXP Semiconductors

PMBFJ310,215

NXP Semiconductors

PMBFJ310,215 by NXP Semiconductors is an N-CHANNEL RF FET for AMPLIFIER applications. It operates in DEPLETION MODE with a 25V DS Breakdown Voltage and 2.5pF Feedback Capacitance at a max power dissipation of 0.25W in a SMALL OUTLINE package style.

LOW NOISE

SINGLE

25 V

JUNCTION

2.5 pF

VERY HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF1208D,115 by NXP Semiconductors

BF1208D,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 6; JESD-609 Code: e3; Minimum Power Gain (Gp): 24 dB;

SINGLE

6 V

.03 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F6

e3

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

24 dB

Not Qualified

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON

BF1208,115 by NXP Semiconductors

BF1208,115

NXP Semiconductors

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; JESD-609 Code: e3; Operating Mode: ENHANCEMENT MODE; No. of Elements: 2;

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F6

e3

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.18 W

23 dB

Not Qualified

FET General Purpose Power

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON

BF1207,115 by NXP Semiconductors

BF1207,115

NXP Semiconductors

NXP Semiconductors' BF1207,115 is a N-CHANNEL RF FET with 6V DS breakdown voltage and 21dB power gain. Ideal for amplifier applications in UHF band, it operates in dual gate enhancement mode with 0.03A max drain current and 0.18W power dissipation.

LOW NOISE

ISOLATED

SINGLE

6 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G6

e3

2

6

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.18 W

21 dB

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF1105R,215 by NXP Semiconductors

BF1105R,215

NXP Semiconductors

BF1105R,215 by NXP Semiconductors is an N-CHANNEL RF FET with a PLASTIC/EPOXY package. It operates in DUAL GATE ENHANCEMENT MODE at 150°C max temp. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND due to its 0.03 A drain current and 0.04 pF feedback capacitance.

SOURCE

SINGLE

7 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.04 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF998,235 by NXP Semiconductors

BF998,235

NXP Semiconductors

BF998,235 by NXP Semiconductors is an N-CHANNEL RF FET with a 12V DS Breakdown Voltage. It operates in DEPLETION MODE and has a max ID of 0.03A. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, this transistor features a GULL WING terminal form and can handle up to 0.2W power dissipation.

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

12 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

IEC-134

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON