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Renesas Electronics RF Small Signal Bipolar Junction Transistors (BJT) 24

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
2SC5754-A by Renesas Electronics

2SC5754-A

Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .735 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1; Transistor Element Material: SILICON;

.5 A

40

1

NPN

.735 W

BIP RF Small Signal

YES

SILICON

2SC5337-AZ by Renesas Electronics

2SC5337-AZ

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .25 A; Minimum DC Current Gain (hFE): 60;

.25 A

SINGLE

60

1

150 Cel

NPN

2 W

Other Transistors

YES

NESG2101M05-A by Renesas Electronics

NESG2101M05-A

Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 130;

.1 A

130

1

NPN

.5 W

BIP RF Small Signal

YES

SILICON GERMANIUM

NESG2101M05-T1-A by Renesas Electronics

NESG2101M05-T1-A

Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 130;

.1 A

130

1

NPN

.5 W

BIP RF Small Signal

YES

SILICON GERMANIUM

2SC5754-T2-A by Renesas Electronics

2SC5754-T2-A

Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .735 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 40; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

.5 A

40

1

NOT SPECIFIED

NPN

.735 W

BIP RF Small Signal

YES

NOT SPECIFIED

SILICON

2SC5508-A by Renesas Electronics

2SC5508-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 20000 MHz; Maximum Power Dissipation (Abs): .115 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

50

1

150 Cel

NPN

.115 W

Other Transistors

YES

20000 MHz

2SC5508-T2-A by Renesas Electronics

2SC5508-T2-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 20000 MHz; Maximum Power Dissipation (Abs): .115 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

50

1

150 Cel

NPN

.115 W

Other Transistors

YES

20000 MHz

2SC5509-A by Renesas Electronics

2SC5509-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 13000 MHz; Maximum Power Dissipation (Abs): .19 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

50

1

150 Cel

NPN

.19 W

Other Transistors

YES

13000 MHz

NE68133-T1B-R33-A by Renesas Electronics

NE68133-T1B-R33-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .065 A; Maximum Collector-Emitter Voltage: 10 V;

LOW NOISE

.065 A

.9 pF

10 V

SINGLE

S BAND

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

9000 MHz

NE68133-T1B-R35-A by Renesas Electronics

NE68133-T1B-R35-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .065 A; No. of Terminals: 3;

LOW NOISE

.065 A

.9 pF

10 V

SINGLE

S BAND

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

9000 MHz

NE68133-A by Renesas Electronics

NE68133-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .065 A; Peak Reflow Temperature (C): NOT SPECIFIED;

LOW NOISE

.065 A

.9 pF

10 V

SINGLE

S BAND

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

9000 MHz

NE851M13-T3-A by Renesas Electronics

NE851M13-T3-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6500 MHz; Maximum Power Dissipation (Abs): .14 W; Maximum Collector Current (IC): .1 A;

.1 A

.8 pF

5.5 V

SINGLE

100

L BAND

R-PDSO-F3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.14 W

Other Transistors

YES

FLAT

DUAL

AMPLIFIER

SILICON

6500 MHz

NE68530-T1-A by Renesas Electronics

NE68530-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 12000 MHz; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

LOW NOISE

.03 A

.7 pF

6 V

SINGLE

75

S BAND

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

Other Transistors

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

12000 MHz

NE68539-T1-A by Renesas Electronics

NE68539-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 12000 MHz; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

LOW NOISE

.03 A

.5 pF

6 V

SINGLE

S BAND

R-PDSO-G4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

GULL WING

DUAL

AMPLIFIER

SILICON

12000 MHz

2SA1977-T1B-A by Renesas Electronics

2SA1977-T1B-A

Renesas Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8500 MHz; Maximum Collector Current (IC): .05 A; Package Style (Meter): SMALL OUTLINE;

LOW NOISE

.05 A

1 pF

12 V

SINGLE

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

AMPLIFIER

SILICON

8500 MHz

2SC5455-A by Renesas Electronics

2SC5455-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 12000 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;

LOW NOISE

.1 A

.7 pF

6 V

SINGLE

L BAND

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

GULL WING

DUAL

10

AMPLIFIER

SILICON

12000 MHz

2SC5455-T1-A by Renesas Electronics

2SC5455-T1-A

Renesas Electronics

2SC5455-T1-A by Renesas Electronics is an NPN RF BJT transistor with a max fT of 12 GHz. It has a collector-emitter voltage of 6V and a collector current of 0.1A, making it suitable for amplifier applications in the L band. This surface-mount transistor comes in a small outline package with Gull Wing terminals.

LOW NOISE

.1 A

.7 pF

6 V

SINGLE

L BAND

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

GULL WING

DUAL

10

AMPLIFIER

SILICON

12000 MHz

2SC5006-T1-A by Renesas Electronics

2SC5006-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4500 MHz; Maximum Collector Current (IC): .1 A; Additional Features: LOW NOISE;

LOW NOISE

.1 A

1.5 pF

12 V

SINGLE

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

4500 MHz

NE68833-T1-A by Renesas Electronics

NE68833-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8500 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Base Capacitance: .85 pF;

LOW NOISE

.1 A

.85 pF

6 V

SINGLE

C BAND

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

8500 MHz

2SC5338-T1-AZ by Renesas Electronics

2SC5338-T1-AZ

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .15 A; Transistor Element Material: SILICON;

COLLECTOR

.15 A

2 pF

12 V

SINGLE

ULTRA HIGH FREQUENCY BAND

R-PDSO-F4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

6000 MHz

2SC5753-T2-A by Renesas Electronics

2SC5753-T2-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 12000 MHz; Maximum Collector Current (IC): .1 A; Additional Features: HIGH RELIABILITY;

HIGH RELIABILITY

.1 A

.7 pF

6 V

SINGLE

L BAND

R-PDSO-F4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

12000 MHz

2SC3356-T1B-R25-A by Renesas Electronics

2SC3356-T1B-R25-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: AMPLIFIER;

LOW NOISE

.1 A

1 pF

12 V

SINGLE

L BAND

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

7000 MHz

2SC5004-T1-A by Renesas Electronics

2SC5004-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .06 A;

.06 A

1.2 pF

12 V

SINGLE

60

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e6

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.1 W

.1 W

YES

Tin/Bismuth (Sn/Bi)

GULL WING

DUAL

AMPLIFIER

SILICON

5000 MHz

.5 V

NE85633-T1B-R25-A by Renesas Electronics

NE85633-T1B-R25-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

1 pF

12 V

SINGLE

50

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

.2 W

YES

GULL WING

DUAL

AMPLIFIER

SILICON

7000 MHz