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PNP RF Small Signal Bipolar Junction Transistors (BJT) 8

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BSR12,215 by NXP Semiconductors

BSR12,215

NXP Semiconductors

BSR12,215 by NXP Semiconductors is a PNP RF small signal BJT designed for switching applications. It features a max collector current of 0.1 A, operates up to 150 °C, and supports frequencies in the S band with a nominal transition frequency of 1500 MHz. Its compact surface mount design ensures efficient performance in electronic circuits.

.1 A

4.5 pF

15 V

SINGLE

30

S BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.25 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

1500 MHz

BFG31,115 by NXP Semiconductors

BFG31,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

1 W

Not Qualified

CECC

Other Transistors

YES

Matte Tin (Sn)

GULL WING

DUAL

40

AMPLIFIER

SILICON

5000 MHz

BFQ149,115 by NXP Semiconductors

BFQ149,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;

COLLECTOR

.1 A

15 V

SINGLE

20

C BAND

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

1 W

Not Qualified

CECC

Other Transistors

YES

TIN

FLAT

SINGLE

30

AMPLIFIER

SILICON

5000 MHz

BFT92,215 by NXP Semiconductors

BFT92,215

NXP Semiconductors

NXP Semiconductors' BFT92,215 is a PNP RF BJT with 3 terminals. It operates in the ultra-high frequency band up to 5 GHz and has a max power dissipation of 0.3W. Ideal for amplifier applications, this transistor can handle a max collector-emitter voltage of 15V at an operating temp of 150°C.

LOW NOISE

.025 A

15 V

SINGLE

20

ULTRA HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFT92W,115 by NXP Semiconductors

BFT92W,115

NXP Semiconductors

NXP Semiconductors' BFT92W,115 is a PNP RF BJT transistor with 3 terminals. It operates in L Band with fT of 4000 MHz and hFE of 20. Ideal for amplifier applications, it has a max power dissipation of 0.3 W and can handle up to 15V collector-emitter voltage.

HIGH RELIABILITY

.025 A

15 V

SINGLE

20

L BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

.3 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON

4000 MHz

BFT93,215 by NXP Semiconductors

BFT93,215

NXP Semiconductors

NXP Semiconductors' BFT93,215 is a PNP RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 5000 MHz and has a max power dissipation of 0.3W. Ideal for amplifier applications, it features a small outline package with gull wing terminals for surface mounting.

LOW NOISE

.035 A

12 V

SINGLE

20

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFT93W,115 by NXP Semiconductors

BFT93W,115

NXP Semiconductors

The NXP BFT93W,115 is a PNP RF BJT transistor with 3 terminals and a max power dissipation of 0.3 W. It operates in the L band with a transition frequency of 4000 MHz, making it ideal for amplifier applications in high-frequency circuits. The small outline package and surface-mount capability enhance its versatility in compact electronic designs.

HIGH RELIABILITY

.05 A

12 V

SINGLE

20

L BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

4000 MHz

2SA1977-T1B-A by Renesas Electronics

2SA1977-T1B-A

Renesas Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8500 MHz; Maximum Collector Current (IC): .05 A; Package Style (Meter): SMALL OUTLINE;

LOW NOISE

.05 A

1 pF

12 V

SINGLE

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

AMPLIFIER

SILICON

8500 MHz