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.35 W RF Small Signal Bipolar Junction Transistors (BJT) 7

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BFR93A,235 by NXP Semiconductors

BFR93A,235

NXP Semiconductors

NXP Semiconductors' BFR93A,235 is a NPN RF BJT transistor with 3 terminals. It operates in L Band with fT of 6000 MHz and hFE of 40. Ideal for amplifier applications, it has a max power dissipation of 0.35W and can handle up to 12V collector-emitter voltage.

LOW NOISE

.035 A

12 V

SINGLE

40

L BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.35 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

6000 MHz

BFR106,215 by NXP Semiconductors

BFR106,215

NXP Semiconductors

NXP Semiconductors' BFR106,215 is a NPN RF BJT transistor with 3 terminals and max. power dissipation of 0.5W. It operates in the ultra-high frequency band at 5000MHz, ideal for amplifier applications. The small outline package with gull wing terminals makes it suitable for surface mount designs in various CECC standard circuits.

LOW NOISE

.1 A

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

.35 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFR92A,215 by NXP Semiconductors

BFR92A,215

NXP Semiconductors

NXP Semiconductors' BFR92A,215 is a NPN RF BJT transistor with 5000 MHz fT. It has a max power dissipation of 0.35 W and operates up to 175°C. Ideal for L Band applications, this transistor offers high gain (hFE=40) and low collector current (IC=0.025 A).

LOW NOISE

.025 A

15 V

SINGLE

40

L BAND

R-PDSO-G3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.35 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFR93A,215 by NXP Semiconductors

BFR93A,215

NXP Semiconductors

NXP Semiconductors' BFR93A,215 is a NPN RF BJT transistor with max. freq. of 6000 MHz and hFE of 40, ideal for L Band applications like amplifiers. It has a max. power dissipation of 0.35 W, operates up to 175°C, and features a small outline package with gull wing terminals for surface mount assembly.

LOW NOISE

.035 A

12 V

SINGLE

40

L BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.35 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

6000 MHz

MPSH10RLRAG by Onsemi

MPSH10RLRAG

Onsemi

MPSH10RLRAG by Onsemi is an NPN RF BJT transistor with a max fT of 650 MHz. It has a max IC of 0.1A and Ptot of 0.35W, making it suitable for amplifier applications in the UHF band. The package is cylindrical with through-hole terminals and can operate up to 150°C.

.1 A

.7 pF

25 V

SINGLE

60

ULTRA HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.35 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

650 MHz

MPSH10G by Onsemi

MPSH10G

Onsemi

MPSH10G by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 25V and fT of 650MHz. Ideal for amplifier applications, it has a max power dissipation of 0.35W and operates in the ultra-high frequency band.

.1 A

.7 pF

25 V

SINGLE

60

ULTRA HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.35 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

650 MHz

MPSH10RLRPG by Onsemi

MPSH10RLRPG

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;

.1 A

.7 pF

25 V

SINGLE

60

ULTRA HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.35 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

650 MHz