Loading...

.12 A RF Small Signal Bipolar Junction Transistors (BJT) 9

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BFG540,215 by NXP Semiconductors

BFG540,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .12 A;

HIGH RELIABILITY

COLLECTOR

.12 A

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

.5 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz

BFG540/X,215 by NXP Semiconductors

BFG540/X,215

NXP Semiconductors

NXP Semiconductors' BFG540/X,215 is a NPN RF BJT with 4 terminals in a small outline package. It operates in L Band with fT of 9000 MHz and can handle 0.12 A collector current. Ideal for amplifier applications, it has a max power dissipation of 0.5 W at 150°C ambient temperature.

HIGH RELIABILITY

COLLECTOR

.12 A

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

.5 W

Not Qualified

CECC

Other Transistors

YES

Matte Tin (Sn)

GULL WING

DUAL

40

AMPLIFIER

SILICON

9000 MHz

BFG540W,115 by NXP Semiconductors

BFG540W,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .12 A;

HIGH RELIABILITY

COLLECTOR

.12 A

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

.5 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz

BFG540W/X,115 by NXP Semiconductors

BFG540W/X,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .12 A;

HIGH RELIABILITY

COLLECTOR

.12 A

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

.5 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

9000 MHz

BFG541,115 by NXP Semiconductors

BFG541,115

NXP Semiconductors

NXP Semiconductors' BFG541,115 is a NPN RF BJT transistor with 9000 MHz fT. It has a max IC of 0.12 A and hFE of 60, ideal for L Band switching applications. The small outline package with gull wing terminals supports surface mount assembly up to 260°C peak reflow temperature.

HIGH RELIABILITY

COLLECTOR

.12 A

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.65 W

.65 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

9000 MHz

BFQ540,115 by NXP Semiconductors

BFQ540,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): 1.2 W; Maximum Collector Current (IC): .12 A;

LOW NOISE, HIGH RELIABILITY

COLLECTOR

.12 A

15 V

SINGLE

60

ULTRA HIGH FREQUENCY BAND

TO-243

R-PSSO-F3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.2 W

Not Qualified

Other Transistors

YES

TIN

FLAT

SINGLE

30

AMPLIFIER

SILICON

9000 MHz

BFR540,215 by NXP Semiconductors

BFR540,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .12 A;

HIGH RELIABILITY

.12 A

SINGLE

60

L BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

.5 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz

BFS540,115 by NXP Semiconductors

BFS540,115

NXP Semiconductors

NXP Semiconductors' BFS540,115 is a NPN RF BJT transistor with 9000 MHz fT. It has a max power dissipation of 0.5 W and operates at up to 175°C. Ideal for ultra-high frequency amplifier applications due to its small outline package and Gull Wing terminals.

HIGH RELIABILITY

.12 A

15 V

SINGLE

60

ULTRA HIGH FREQUENCY BAND

R-PSSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

.5 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

SINGLE

30

AMPLIFIER

SILICON

9000 MHz

BFP780H6327XTSA1 by Infineon Technologies

BFP780H6327XTSA1

Infineon Technologies

BFP780H6327XTSA1 by Infineon is a NPN RF BJT with 4 terminals, operating at -40°C to 6.1V. It's a single-configured transistor for ultra-high frequency amplification applications in small outline package style with Gull Wing terminals. With a max collector current of 0.12A and fT of 20GHz, it's ideal for high-frequency amplifier circuits requiring compact design.

EMITTER

.12 A

6.1 V

SINGLE

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

20000 MHz