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625 W RF Power Field Effect Transistors (FET) 6

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
STAC2942BW by STMicroelectronics

STAC2942BW

STMicroelectronics

STAC2942BW by STMicroelectronics is an N-CHANNEL RF Power FET with 40A max drain current and 625W max power dissipation. Ideal for high-power applications, it operates at up to 200°C, featuring metal-oxide semiconductor technology for efficient performance in single configuration setups.

SINGLE

40 A

40 A

METAL-OXIDE SEMICONDUCTOR

1

200 Cel

NOT SPECIFIED

N-CHANNEL

625 W

FET General Purpose Powers

NOT SPECIFIED

STAC2932F by STMicroelectronics

STAC2932F

STMicroelectronics

STAC2932F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 40 A, breakdown voltage of 125 V, and operates in the ultra-high frequency band. Its robust design supports high power dissipation up to 625 W.

SOURCE

SINGLE

125 V

40 A

40 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-CDFP-F4

1

4

ENHANCEMENT MODE

200 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLATPACK

NOT SPECIFIED

N-CHANNEL

625 W

Not Qualified

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

STAC2932B by STMicroelectronics

STAC2932B

STMicroelectronics

STAC2932B by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 40 A, breakdown voltage of 125 V, and can dissipate up to 625 W. Ideal for high-performance RF amplification in compact designs.

SOURCE

SINGLE

125 V

40 A

40 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-CDFM-F4

1

4

ENHANCEMENT MODE

200 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

625 W

Not Qualified

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

SILICON

STAC2942B by STMicroelectronics

STAC2942B

STMicroelectronics

STAC2942B by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 40 A, a breakdown voltage of 130 V, and can dissipate up to 625 W. Ideal for high-performance RF amplification in compact designs.

SOURCE

SINGLE

130 V

40 A

40 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-XDFM-F4

1

4

ENHANCEMENT MODE

200 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

625 W

Not Qualified

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

SILICON

STAC3932F by STMicroelectronics

STAC3932F

STMicroelectronics

STAC3932F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 20 A, a breakdown voltage of 250 V, and operates in the ultra-high frequency band. Its robust design supports high power dissipation up to 625 W.

SOURCE

SINGLE

250 V

20 A

20 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-CDFP-F4

1

4

ENHANCEMENT MODE

200 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLATPACK

NOT SPECIFIED

N-CHANNEL

625 W

Not Qualified

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

STAC3932B by STMicroelectronics

STAC3932B

STMicroelectronics

STAC3932B by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 20 A, breakdown voltage of 250 V, and power dissipation up to 625 W. Ideal for high-performance RF amplification in compact designs.

SOURCE

SINGLE

250 V

20 A

20 A

METAL-OXIDE SEMICONDUCTOR

5.2 pF

ULTRA HIGH FREQUENCY BAND

R-CDFM-F4

1

4

ENHANCEMENT MODE

200 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

625 W

Not Qualified

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

SILICON