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96 W Power Field Effect Transistors (FET) 10

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BUK9515-60E,127 by NXP Semiconductors

BUK9515-60E,127

NXP Semiconductors

BUK9515-60E,127 from NXP Semiconductors is a single N-channel power FET designed for enhancement mode operation. It supports a max drain current of 54 A and power dissipation of 96 W, making it ideal for high-performance applications in automotive and industrial sectors. With an operating temp up to 175 °C, it ensures reliability in demanding environments.

SINGLE

54 A

54 A

METAL-OXIDE SEMICONDUCTOR

e3

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

96 W

FET General Purpose Power

NO

TIN

BUK7514-60E,127 by NXP Semiconductors

BUK7514-60E,127

NXP Semiconductors

BUK7514-60E,127 from NXP Semiconductors is a single N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 58 A and power dissipation of 96 W, operating up to 175 °C. Perfect for efficient power management in various electronic devices.

SINGLE

58 A

58 A

METAL-OXIDE SEMICONDUCTOR

e3

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

96 W

FET General Purpose Power

NO

TIN

NTMFS5832NLT1G by Onsemi

NTMFS5832NLT1G

Onsemi

NTMFS5832NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 443A pulsed drain current. Ideal for applications requiring high power dissipation and low on-resistance in small outline packages.

134 mJ

SINGLE WITH BUILT-IN DIODE

40 V

111 A

20 A

.0065 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

96 W

443 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SILICON

BUK968R3-40E,118 by NXP Semiconductors

BUK968R3-40E,118

NXP Semiconductors

NXP Semiconductors' BUK968R3-40E,118 is a N-channel Power FET with 40V DS breakdown voltage and 319A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.0079 ohm max on-resistance, and 96W power dissipation in a small outline package.

AVALANCHE RATED

43.9 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

75 A

75 A

.0079 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

96 W

319 A

AEC-Q101; IEC-60134

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NDD60N550U1-1G by Onsemi

NDD60N550U1-1G

Onsemi

NDD60N550U1-1G by Onsemi is a N-CHANNEL FET with 8.5A ID and 96W power dissipation. Ideal for high-power applications, it operates up to 150 °C with TIN finish, MSL level 3, and peak reflow temp of 260°C in METAL-OXIDE SEMICONDUCTOR technology.

SINGLE

8.5 A

8.5 A

METAL-OXIDE SEMICONDUCTOR

e3

3

1

150 Cel

260

N-CHANNEL

96 W

FET General Purpose Power

NO

TIN

30

NDD60N550U1T4G by Onsemi

NDD60N550U1T4G

Onsemi

NDD60N550U1T4G by Onsemi is an N-CHANNEL FET with 8.5A max drain current and 96W max power dissipation. Ideal for power applications, it operates at up to 150 °C and features surface mount configuration for easy installation.

SINGLE

8.5 A

8.5 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

150 Cel

260

N-CHANNEL

96 W

FET General Purpose Power

YES

TIN

30

NVD5863NLT4G by Onsemi

NVD5863NLT4G

Onsemi

NVD5863NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 442A IDM, and 0.011 ohm RDS(on). It is an N-CHANNEL transistor in PLASTIC/EPOXY package ideal for power applications requiring high current handling capabilities.

320 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

82 A

13 A

.011 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

96 W

442 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

BUK7528-55,127 by NXP Semiconductors

BUK7528-55,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 96 W; Maximum Drain Current (ID): 40 A; Maximum Pulsed Drain Current (IDM): 160 A;

ESD PROTECTION

70 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

40 A

40 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

160 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

96 W

96 W

160 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

62 ns

94 ns

STL120N4LF6AG by STMicroelectronics

STL120N4LF6AG

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 96 W; Maximum Feedback Capacitance (Crss): 373 pF; Maximum Drain Current (ID): 55 A;

BULK: 3000

200 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

55 A

.0045 ohm

METAL-OXIDE SEMICONDUCTOR

373 pF

R-PDSO-F8

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

96 W

220 A

AEC-Q101

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NVD5863NLT4G-VF01 by Onsemi

NVD5863NLT4G-VF01

Onsemi

NVD5863NLT4G-VF01 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 82A Max ID, and 0.009 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance. Operating in Enhancement Mode, it has a max power dissipation of 96W and can handle up to 500A IDM.

265 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

82 A

82 A

.009 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

96 W

500 A

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON