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94 W Power Field Effect Transistors (FET) 23

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IPB041N04NGATMA1 by Infineon Technologies

IPB041N04NGATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PSSO-G2;

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

80 A

80 A

.0041 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

94 W

400 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPP041N04NGXKSA1 by Infineon Technologies

IPP041N04NGXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Maximum Operating Temperature: 175 Cel; Maximum Drain Current (Abs) (ID): 80 A;

60 mJ

SINGLE WITH BUILT-IN DIODE

40 V

80 A

80 A

.0041 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

94 W

400 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPB034N03LGATMA1 by Infineon Technologies

IPB034N03LGATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Maximum Drain Current (Abs) (ID): 80 A; Avalanche Energy Rating (EAS): 70 mJ;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

70 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

80 A

80 A

.0047 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

94 W

400 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPP034N03LGXKSA1 by Infineon Technologies

IPP034N03LGXKSA1

Infineon Technologies

Infineon Technologies' IPP034N03LGXKSA1 is a power FET with N-channel polarity and a built-in diode. It has a min DS breakdown voltage of 30V and can handle a max pulsed drain current of 400A. This transistor is commonly used for switching applications.

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

70 mJ

SINGLE WITH BUILT-IN DIODE

30 V

80 A

80 A

.0047 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

94 W

400 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPB039N04LGATMA1 by Infineon Technologies

IPB039N04LGATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Case Connection: DRAIN; Maximum Operating Temperature: 175 Cel;

LOGIC LEVEL COMPATIBLE

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

80 A

80 A

.0052 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

94 W

400 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPP039N04LGXKSA1 by Infineon Technologies

IPP039N04LGXKSA1

Infineon Technologies

IPP039N04LGXKSA1 by Infineon Technologies is a N-CHANNEL FET with 40V DS Breakdown Voltage, 400A IDM, and 0.0052 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power tasks.

LOGIC LEVEL COMPATIBLE

60 mJ

SINGLE WITH BUILT-IN DIODE

40 V

80 A

80 A

.0052 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

94 W

400 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPB05N03LA by Infineon Technologies

IPB05N03LA

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Minimum DS Breakdown Voltage: 25 V; Transistor Application: SWITCHING;

LOGIC LEVEL COMPATIBLE

190 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

80 A

80 A

.0078 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

220

N-CHANNEL

94 W

385 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

IPP05N03LA by Infineon Technologies

IPP05N03LA

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Maximum Drain Current (Abs) (ID): 80 A; Maximum Drain Current (ID): 80 A;

LOGIC LEVEL COMPATIBLE

190 mJ

SINGLE WITH BUILT-IN DIODE

25 V

80 A

80 A

.0081 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

94 W

385 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPD05N03LAG by Infineon Technologies

IPD05N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Terminal Finish: MATTE TIN; No. of Terminals: 2;

LOGIC LEVEL COMPATIBLE

300 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.0084 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

94 W

350 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPD05N03LBG by Infineon Technologies

IPD05N03LBG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Maximum Operating Temperature: 175 Cel; Package Style (Meter): SMALL OUTLINE;

LOGIC LEVEL COMPATIBLE

120 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

90 A

90 A

.0048 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

94 W

420 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPB05N03LB by Infineon Technologies

IPB05N03LB

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;

LOGIC LEVEL COMPATIBLE

136 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

80 A

80 A

.005 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

94 W

320 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPP05N03LBG by Infineon Technologies

IPP05N03LBG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Avalanche Energy Rating (EAS): 136 mJ; Minimum DS Breakdown Voltage: 30 V;

LOGIC LEVEL COMPATIBLE

136 mJ

SINGLE WITH BUILT-IN DIODE

30 V

80 A

80 A

.0053 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

94 W

320 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPP07N03LBG by Infineon Technologies

IPP07N03LBG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;

LOGIC LEVEL COMPATIBLE

164 mJ

SINGLE WITH BUILT-IN DIODE

30 V

50 A

50 A

.0066 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

94 W

200 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPU06N03LBG by Infineon Technologies

IPU06N03LBG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;

LOGIC LEVEL COMPATIBLE

160 mJ

SINGLE WITH BUILT-IN DIODE

30 V

50 A

50 A

.0063 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

94 W

200 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPI126N10N3G by Infineon Technologies

IPI126N10N3G

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Maximum Operating Temperature: 175 Cel; Terminal Position: SINGLE;

70 mJ

SINGLE WITH BUILT-IN DIODE

100 V

58 A

58 A

.0126 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

94 W

232 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPS031N03LG by Infineon Technologies

IPS031N03LG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Terminal Finish: MATTE TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

60 mJ

SINGLE WITH BUILT-IN DIODE

30 V

90 A

90 A

.004 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

94 W

400 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NVMFS6B14NT1G by Onsemi

NVMFS6B14NT1G

Onsemi

NVMFS6B14NT1G by Onsemi is a Power FET with N-CHANNEL polarity, 100V DS breakdown voltage, and 140A max pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics and industrial control systems.

29 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

55 A

11 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

94 W

140 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

NVMFS6B14NT3G by Onsemi

NVMFS6B14NT3G

Onsemi

NVMFS6B14NT3G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 140A IDM, and 0.015 ohm RDS(ON). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.

29 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

55 A

11 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

94 W

140 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

NVMFS6B14NWFT1G by Onsemi

NVMFS6B14NWFT1G

Onsemi

NVMFS6B14NWFT1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 140A IDM, and 0.015 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 compliance.

29 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

55 A

11 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

94 W

140 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

NVMFS6B14NWFT3G by Onsemi

NVMFS6B14NWFT3G

Onsemi

NVMFS6B14NWFT3G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 140A IDM, and 0.015 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.

29 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

55 A

11 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

94 W

140 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

FDB86569_F085 by Fairchild Semiconductor

FDB86569_F085

Fairchild Semiconductor

Fairchild Semiconductor's FDB86569_F085 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 80A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 94W Power Dissipation, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this MOSFET has an Avalanche Energy Rating of 41mJ and withstands temperatures up to 175°C.

41 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

80 A

80 A

.0056 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

94 W

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

45 ns

53 ns

FDB9409L-F085 by Onsemi

FDB9409L-F085

Onsemi

The Onsemi FDB9409L-F085 is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 90A ID. Ideal for SWITCHING applications, it features a built-in DIODE, 94W power dissipation, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max temp of 175 °C and meets AEC-Q101 standards.

33.7 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

90 A

90 A

.0047 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

94 W

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

72 ns

53 ns

FCP11N60N-F102 by Onsemi

FCP11N60N-F102

Onsemi

FCP11N60N-F102 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It has a Max IDM of 32.4A and EAS of 201.7mJ, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.299 ohm RDS(on) and can handle up to 94W power dissipation at temperatures ranging from -55 to 150 °C.

201.7 mJ

SINGLE WITH BUILT-IN DIODE

600 V

10.8 A

10.8 A

.299 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

94 W

32.4 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

124 ns

65.4 ns