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8.33 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PMT29EN,115 by NXP Semiconductors

PMT29EN,115

NXP Semiconductors

PMT29EN,115 by NXP Semiconductors is an N-channel MOSFET ideal for power applications. It supports a max drain current of 6 A and power dissipation of 8.33 W, operating up to 150 °C. Its surface mount design enhances efficiency in compact electronic devices.

SINGLE

6 A

6 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

8.33 W

FET General Purpose Power

YES

TIN

30

PMT29EN,135 by NXP Semiconductors

PMT29EN,135

NXP Semiconductors

PMT29EN,135 by NXP Semiconductors is an N-channel enhancement mode FET ideal for power applications. It supports a max drain current of 6 A and power dissipation of 8.33 W, operating up to 150 °C. This surface-mount transistor is perfect for efficient energy management in electronic devices.

SINGLE

6 A

6 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

8.33 W

FET General Purpose Power

YES

PMT21EN,115 by NXP Semiconductors

PMT21EN,115

NXP Semiconductors

PMT21EN,115 from NXP Semiconductors is an N-channel MOSFET ideal for power applications. It supports a max drain current of 7.4 A and power dissipation of 8.33 W, operating up to 150 °C. This surface-mount FET excels in enhancement mode configurations.

SINGLE

7.4 A

7.4 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

8.33 W

FET General Purpose Power

YES

TIN

30

PMDPB70EN,115 by NXP Semiconductors

PMDPB70EN,115

NXP Semiconductors

NXP Semiconductors' PMDPB70EN,115 is an N-CHANNEL Power FET with 3.5A max drain current and 8.33W power dissipation. Ideal for applications requiring high efficiency in a surface-mount package, such as power management systems or motor control circuits operating at up to 150°C.

3.5 A

3.5 A

METAL-OXIDE SEMICONDUCTOR

e3

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

8.33 W

FET General Purpose Power

YES

TIN

30

PMDPB42UN,115 by NXP Semiconductors

PMDPB42UN,115

NXP Semiconductors

NXP Semiconductors' PMDPB42UN,115 is an N-CHANNEL Power FET with 3.9A max drain current and 8.33W power dissipation. Ideal for applications requiring high-power handling in enhancement mode operation, such as power supplies and motor control systems.

3.9 A

3.9 A

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

150 Cel

N-CHANNEL

8.33 W

FET General Purpose Power

YES