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78.1 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SUP85N03-3M6P-GE3 by Vishay Intertechnology

SUP85N03-3M6P-GE3

Vishay Intertechnology

Vishay Intertechnology's SUP85N03-3M6P-GE3 is a N-channel Power FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for switching applications, it features 0.0036 ohm RDS(on) and 101mJ EAS rating. Suitable for high-power operations in various electronic devices.

101 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

85 A

85 A

.0036 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

78.1 W

120 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTD85N02RT4 by Onsemi

NTD85N02RT4

Onsemi

NTD85N02RT4 by Onsemi is a single N-channel power FET with built-in diode for switching applications. It features a max drain current of 85A, min DS breakdown voltage of 24V, and max pulsed drain current of 192A. This MOSFET operates in enhancement mode with a max operating temperature of 150 °C, making it suitable for high-power applications.

85 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

24 V

12 A

85 A

.0052 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

78.1 W

192 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTD85N02R by Onsemi

NTD85N02R

Onsemi

NTD85N02R by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V DS Breakdown Voltage, 192A IDM, and 0.0052 ohm Drain-Source Resistance. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 78.1W, making it ideal for high-power switching circuits.

85 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

24 V

12 A

85 A

.0052 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

78.1 W

192 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTD85N02RG by Onsemi

NTD85N02RG

Onsemi

NTD85N02RG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 85A, Max Pulsed Drain Current of 192A, and Min DS Breakdown Voltage of 24V. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 78.1W in a SMALL OUTLINE package style.

85 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

24 V

12 A

85 A

.0052 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

78.1 W

192 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTD85N02RT4G by Onsemi

NTD85N02RT4G

Onsemi

NTD85N02RT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V DS Breakdown Voltage, 192A Max Pulsed Drain Current, and 0.0052 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in various electronic devices.

85 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

24 V

12 A

85 A

.0052 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

78.1 W

192 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON