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3 W Power Field Effect Transistors (FET) 19

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
AO4413L by Alpha & Omega Semiconductor

AO4413L

Alpha & Omega Semiconductor

AO4413L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 15A ID, 0.0085 ohm RDS(on), and operates in ENHANCEMENT MODE. With GULL WING terminals and RECTANGULAR package shape, it's designed for high-power efficiency in various electronic systems.

SINGLE WITH BUILT-IN DIODE

30 V

15 A

15 A

.0085 ohm

METAL-OXIDE SEMICONDUCTOR

1067 pF

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

3 W

3 W

80 A

YES

GULL WING

DUAL

SWITCHING

SILICON

NTMD5838NLR2G by Onsemi

NTMD5838NLR2G

Onsemi

NTMD5838NLR2G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 35A IDM, and 0.0308 ohm RDS(on). It is used in applications requiring high power dissipation up to 3W, such as power management systems and motor control circuits.

20 mJ

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

8.9 A

7.4 A

.0308 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3 W

35 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

CSD16323Q3C by Texas Instruments

CSD16323Q3C

Texas Instruments

CSD16323Q3C by Texas Instruments is an N-CHANNEL Power FET with 25V DS Breakdown Voltage and 112A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.0072 ohm Drain-Source On Resistance.

AVALANCHE RATED

125 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

60 A

21 A

.0072 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-N8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3 W

112 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

NDT451ANJ23Z by Fairchild Semiconductor

NDT451ANJ23Z

Fairchild Semiconductor

Fairchild Semiconductor's NDT451ANJ23Z is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 25A Max Pulsed Drain Current, and 0.035 ohm Max Drain-Source Resistance. The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 3W at 150°C.

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

7.2 A

7.2 A

.035 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

3 W

25 A

Not Qualified

FET General Purpose Power

YES

GULL WING

DUAL

SWITCHING

SILICON

FDS2170N7 by Fairchild Semiconductor

FDS2170N7

Fairchild Semiconductor

FDS2170N7 by Fairchild Semiconductor is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max Pulsed Drain Current and 0.128 ohm Max Drain-Source On Resistance. The PLASTIC/EPOXY package with GULL WING terminals operates in ENHANCEMENT MODE at up to 150°C.

400 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

200 V

3 A

3 A

.128 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

3 W

20 A

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON

STQ2NK60ZR-AP by STMicroelectronics

STQ2NK60ZR-AP

STMicroelectronics

STQ2NK60ZR-AP by STMicroelectronics is an N-channel FET designed for switching applications. It features a 600V breakdown voltage, 1.6A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.

90 mJ

SINGLE WITH BUILT-IN DIODE

600 V

.4 A

.4 A

8 ohm

METAL-OXIDE SEMICONDUCTOR

TO-92

O-PBCY-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

3 W

1.6 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STQ3NK50ZR-AP by STMicroelectronics

STQ3NK50ZR-AP

STMicroelectronics

STQ3NK50ZR-AP by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 2A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.

120 mJ

SINGLE WITH BUILT-IN DIODE

500 V

.5 A

.5 A

3.3 ohm

METAL-OXIDE SEMICONDUCTOR

TO-92

O-PBCY-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

3 W

2 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

SUD50P04-15-E3 by Vishay Intertechnology

SUD50P04-15-E3

Vishay Intertechnology

Vishay Intertechnology's SUD50P04-15-E3 is a P-CHANNEL FET with 40V DS Breakdown Voltage, 150A IDM, and 0.015 ohm RDS(ON). Ideal for power applications, it features a built-in diode, operates in enhancement mode, and has a max operating temperature of 175°C.

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

50 A

50 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

3 W

150 A

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

SQ2319ES-T1-GE3 by Vishay Intertechnology

SQ2319ES-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SQ2319ES-T1-GE3 is a P-channel FET with 40V DS breakdown voltage, 30A IDM, and 0.082 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode at up to 175°C, it offers high power dissipation of 3W.

1.8 mJ

SINGLE WITH BUILT-IN DIODE

40 V

3.3 A

3.3 A

.082 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236

R-PDSO-G3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

3 W

30 A

Not Qualified

Other Transistors

YES

GULL WING

DUAL

40

SWITCHING

SILICON

STS15N4LLF5 by STMicroelectronics

STS15N4LLF5

STMicroelectronics

STS15N4LLF5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 15 A, a breakdown voltage of 40 V, and low on-resistance of 0.0083 Ω. Ideal for compact power management in electronics.

1090 mJ

SINGLE WITH BUILT-IN DIODE

40 V

15 A

15 A

.0083 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3 W

63.6 A

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

40

SWITCHING

SILICON

DMNH6011LK3Q-13 by Diodes Incorporated

DMNH6011LK3Q-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Pulsed Drain Current (IDM): 180 A; Terminal Form: GULL WING;

HIGH RELIABILITY

147 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

80 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

127 pF

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3 W

180 A

AEC-Q101; MIL-STD-202

YES

Matte Tin (Sn)

GULL WING

SINGLE

30

SWITCHING

SILICON

DMNH6011LK3-13 by Diodes Incorporated

DMNH6011LK3-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Operating Temperature: 175 Cel; Maximum Feedback Capacitance (Crss): 127 pF;

147 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

80 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

127 pF

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3 W

180 A

MIL-STD-202

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

DMTH6015LDVW-7 by Diodes Incorporated

DMTH6015LDVW-7

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Case Connection: DRAIN; Terminal Finish: MATTE TIN;

20.8 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

9.2 A

.0205 ohm

METAL-OXIDE SEMICONDUCTOR

20.5 pF

S-PDSO-F8

e3

2

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

3 W

98 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMTH6015LDVW-13 by Diodes Incorporated

DMTH6015LDVW-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-30 Code: S-PDSO-F8; Minimum DS Breakdown Voltage: 60 V;

20.8 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

9.2 A

.0205 ohm

METAL-OXIDE SEMICONDUCTOR

20.5 pF

S-PDSO-F8

e3

2

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

3 W

98 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMTH6015LDVWQ-13 by Diodes Incorporated

DMTH6015LDVWQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;

20.8 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

9.2 A

.0205 ohm

METAL-OXIDE SEMICONDUCTOR

20.5 pF

S-PDSO-F8

e3

2

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

3 W

98 A

AEC-Q101; MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMT8008SK3-13 by Diodes Incorporated

DMT8008SK3-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JEDEC-95 Code: TO-252; Avalanche Energy Rating (EAS): 80 mJ;

80 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

90 A

.0078 ohm

METAL-OXIDE SEMICONDUCTOR

56 pF

TO-252

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3 W

360 A

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

DMT8008LK3-13 by Diodes Incorporated

DMT8008LK3-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain Current (ID): 95 A; Maximum Drain-Source On Resistance: .007 ohm;

26.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

95 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

52 pF

TO-252

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3 W

380 A

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

DMP26M1UFG-13 by Diodes Incorporated

DMP26M1UFG-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Operating Temperature: 150 Cel; Terminal Form: NO LEAD;

71 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

71 A

.0055 ohm

METAL-OXIDE SEMICONDUCTOR

564 pF

S-PDSO-N8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

3 W

110 A

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMT10H032LK3-13 by Diodes Incorporated

DMT10H032LK3-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Feedback Capacitance (Crss): 6.9 pF; JESD-30 Code: R-PSSO-G2;

25.3 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

26 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

6.9 pF

TO-252

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

3 W

104 A

MIL-STD-202

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON