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255 W Power Field Effect Transistors (FET) 6

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BUK753R4-30B,127 by NXP Semiconductors

BUK753R4-30B,127

NXP Semiconductors

BUK753R4-30B,127 by NXP Semiconductors is a powerful N-channel FET designed for high-performance applications. It supports a max drain current of 75 A and power dissipation of 255 W, operating efficiently up to 175 °C. Ideal for switching and amplification in various electronic circuits.

SINGLE

75 A

75 A

METAL-OXIDE SEMICONDUCTOR

e3

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

255 W

FET General Purpose Power

NO

Matte Tin (Sn)

BUK763R4-30B,118 by NXP Semiconductors

BUK763R4-30B,118

NXP Semiconductors

BUK763R4-30B,118 by NXP Semiconductors is a powerful N-channel FET designed for high-efficiency applications. It supports a max drain current of 75 A and power dissipation of 255 W, operating up to 175 °C. Ideal for enhancing performance in various electronic circuits.

SINGLE

75 A

75 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

175 Cel

245

N-CHANNEL

255 W

FET General Purpose Power

YES

TIN

30

STW47NM60ND by STMicroelectronics

STW47NM60ND

STMicroelectronics

STW47NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage and 140A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 255W and operates in ENHANCEMENT MODE up to 150 °C.

1000 mJ

SINGLE WITH BUILT-IN DIODE

600 V

35 A

35 A

.088 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

255 W

140 A

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW43NM50N by STMicroelectronics

STW43NM50N

STMicroelectronics

STW43NM50N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 500V breakdown voltage, 37A max drain current, and 255W power dissipation. Ideal for high-efficiency circuits in various electronic devices.

SINGLE WITH BUILT-IN DIODE

500 V

37 A

37 A

.085 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AC

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

255 W

148 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW43NM60N by STMicroelectronics

STW43NM60N

STMicroelectronics

STW43NM60N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 600V breakdown voltage and 35A max drain current. It offers a low on-resistance of 0.095Ω and operates at up to 150 °C. Its robust design ensures reliable performance in demanding environments.

SINGLE WITH BUILT-IN DIODE

600 V

35 A

35 A

.095 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AC

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

255 W

140 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW43NM60ND by STMicroelectronics

STW43NM60ND

STMicroelectronics

STW43NM60ND from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 140A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.

1000 mJ

SINGLE WITH BUILT-IN DIODE

600 V

35 A

35 A

.088 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

255 W

140 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON