Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
NTBV75N06T4G
Onsemi
NTBV75N06T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.0095 ohm RDS(on). Ideal for SWITCHING applications in automotive industry due to AEC-Q101 standard compliance and 175 °C max operating temp.
844 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
60 V
75 A
.0095 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
214 W
225 A
AEC-Q101
FET General Purpose Power
YES
Matte Tin (Sn) - annealed
GULL WING
SINGLE
30
SWITCHING
SILICON
IPI037N08N3GXKSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Maximum Operating Temperature: 175 Cel; Avalanche Energy Rating (EAS): 510 mJ;
510 mJ
80 V
100 A
.00375 ohm
TO-262AA
R-PSIP-T3
3
IN-LINE
400 A
Not Qualified
NO
TIN
THROUGH-HOLE
STW20NM50
STMicroelectronics
STW20NM50 by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 650mJ EAS, and 0.25 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 214W at 150 °C.
650 mJ
500 V
20 A
.25 ohm
TO-247
R-PSFM-T3
150 Cel
FLANGE MOUNT
80 A
Matte Tin (Sn)
IPB100N06S3-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 214 W; Maximum Drain Current (Abs) (ID): 100 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
450 mJ
55 V
.0041 ohm
TO-263AB
245
MATTE TIN
IPB100N06S3L-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 214 W; Maximum Operating Temperature: 175 Cel; Avalanche Energy Rating (EAS): 450 mJ;
LOGIC LEVEL COMPATIBLE
.0059 ohm
IPP100N06S3-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Maximum Drain-Source On Resistance: .0044 ohm; JESD-30 Code: R-PSFM-T3;
.0044 ohm
TO-220AB
IPP100N06S3L-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Maximum Drain-Source On Resistance: .0062 ohm; Avalanche Energy Rating (EAS): 450 mJ;
.0062 ohm
IPP06CN10LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Package Style (Meter): FLANGE MOUNT; Maximum Pulsed Drain Current (IDM): 400 A;
480 mJ
100 V
IPI034NE7N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
640 mJ
75 V
.0034 ohm
NOT SPECIFIED
NTB75N06LT4
NTB75N06LT4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.011 ohm RDS(on). Ideal for SWITCHING applications due to its 214W Pdiss, 175 °C Temp Rating, and EAS of 844mJ. Package: PLASTIC/EPOXY, GULL WING Terminals, ENHANCEMENT MODE operation.
.011 ohm
e0
235
TIN LEAD
NTB75N06L
The Onsemi NTB75N06L is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 225A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.011 ohm RDS(on), and 214W Pdiss. Suitable for surface mount designs in power electronics up to 175 °C operating temp.
NTP75N06L
NTP75N06L by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.011 ohm RDS. It's used for SWITCHING applications due to its 214W Pdiss, 175 °C Temp, and EAS of 844mJ.
NTB30N20
The Onsemi NTB30N20 is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 90A and EAS of 450mJ, making it suitable for high-power operations. With a low 0.081 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 175 °C, offering reliable performance in various power electronics designs.
AVALANCHE RATED
200 V
30 A
.081 ohm
90 A
NTB30N20T4G
NTB30N20T4G by Onsemi is a N-CHANNEL FET with 200V DS Breakdown Voltage, 30A Max ID, and 0.081 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in diode in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 214W at 175 °C.
NTP52N10G
NTP52N10G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 156A IDM, 800mJ EAS, and 0.03 ohm RDS(on). Package style is FLANGE MOUNT with SILICON element material and 175 °C max operating temp.
800 mJ
60 A
.03 ohm
156 A
NTB75N06LG
NTB75N06LG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 225A and EAS of 844mJ, suitable for high-power operations. With 0.011 ohm RDS(on) and 214W Pdiss, it ensures efficient performance in ENHANCEMENT MODE at up to 175 °C.
NTB75N06LT4G
NTB75N06LT4G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 225A and EAS of 844mJ, suitable for high-power operations. With 0.011 ohm RDS(on) and 214W Pdiss, it offers efficient performance in ENHANCEMENT MODE operation.
NTB30N20G
The Onsemi NTB30N20G is a N-CHANNEL FET with 200V DS Breakdown Voltage, 90A IDM, and 0.081 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in diode, operates in ENHANCEMENT MODE, and has a max power dissipation of 214W.
IPP070N06LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; No. of Terminals: 3; Maximum Pulsed Drain Current (IDM): 320 A;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.007 ohm
320 A
IPP06CNE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; No. of Terminals: 3; JESD-30 Code: R-PSFM-T3;
85 V
.0065 ohm
IPB06CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 214 W; Peak Reflow Temperature (C): 245; Maximum Drain Current (ID): 100 A;
IPB080N06NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 214 W; Terminal Position: SINGLE; Peak Reflow Temperature (C): 245;
448 mJ
.0077 ohm
IPI06CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Terminal Position: SINGLE; JEDEC-95 Code: TO-262AA;
IPP06CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; No. of Elements: 1; Avalanche Energy Rating (EAS): 480 mJ;
IPP080N06NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Qualification: Not Qualified; Package Shape: RECTANGULAR;
.008 ohm
FDMS9408-F085
FDMS9408-F085 by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 80A Drain Current, and 0.0018 ohm On Resistance. Ideal for SWITCHING applications in automotive (AEC-Q101) and industrial sectors due to its high power dissipation of 214W and fast turn-on/off times of 51ns/79ns.
143 mJ
40 V
.0018 ohm
R-PDSO-F5
5
-55 Cel
FLAT
DUAL
79 ns
51 ns
FDWS9508L-F085
FDWS9508L-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 80A ID. Ideal for SWITCHING applications, it features a built-in DIODE, 214W Power Dissipation, and operates in ENHANCEMENT MODE. This METAL-OXIDE SEMICONDUCTOR device has a -55 to 175 °C temperature range and AEC-Q101 certification.
211 mJ
.0085 ohm
MO-240
P-CHANNEL
780 ns
23 ns
LSIC1MO120G0080
Littelfuse
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Maximum Feedback Capacitance (Crss): 9 pF; JESD-30 Code: R-PSFM-T4;
ULTRA LOW RESISTANCE
1200 V
39 A
.1 ohm
9 pF
TO-247AD
R-PSFM-T4
4
SILICON CARBIDE
© 2023 All rights reserved
