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2.7 W Power Field Effect Transistors (FET) 17

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PMZB790SN,315 by NXP Semiconductors

PMZB790SN,315

NXP Semiconductors

PMZB790SN,315 by NXP Semiconductors is an N-CHANNEL Power FET with a max drain current of 0.65A and power dissipation of 2.7W. It operates in enhancement mode with a max temp of 150°C, making it ideal for applications requiring high efficiency and reliability in surface mount configurations.

SINGLE

.65 A

.65 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

2.7 W

FET General Purpose Power

YES

TIN

30

PMZB380XN,315 by NXP Semiconductors

PMZB380XN,315

NXP Semiconductors

PMZB380XN,315 by NXP Semiconductors is a single N-channel MOSFET designed for enhancement mode applications. It supports a max drain current of 0.93 A and power dissipation of 2.7 W, operating up to 150 °C. Ideal for efficient power management in compact devices.

SINGLE

.93 A

.93 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

2.7 W

FET General Purpose Power

YES

TIN

30

PMZB420UN,315 by NXP Semiconductors

PMZB420UN,315

NXP Semiconductors

PMZB420UN,315 by NXP Semiconductors is an N-CHANNEL FET with 0.9A max drain current and 2.7W max power dissipation in enhancement mode. Ideal for applications requiring a surface-mount single configuration FET with a max operating temperature of 150°C, such as power management systems.

SINGLE

.9 A

.9 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

2.7 W

FET General Purpose Power

YES

TIN

30

PMZ290UNYL by NXP Semiconductors

PMZ290UNYL

NXP Semiconductors

PMZ290UNYL by NXP Semiconductors is an N-channel enhancement mode FET ideal for power management applications. It supports a max drain current of 1 A, power dissipation of 2.7 W, and operates up to 150 °C. Its surface mount design enhances versatility in circuit integration.

SINGLE

1 A

1 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

2.7 W

FET General Purpose Power

YES

STS26N3LLH6 by STMicroelectronics

STS26N3LLH6

STMicroelectronics

STS26N3LLH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage and 104A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.0053 ohm Drain-Source On Resistance, and operates in ENHANCEMENT MODE at up to 150 °C.

ULTRA-LOW RESISTANCE

525 mJ

SINGLE WITH BUILT-IN DIODE

30 V

26 A

26 A

.0053 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

2.7 W

104 A

FET General Purpose Powers

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

STS19N3LLH6 by STMicroelectronics

STS19N3LLH6

STMicroelectronics

STS19N3LLH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 76A IDM, and 0.0075 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. Package style is SMALL OUTLINE with GULL WING terminals.

ULTRA-LOW RESISTANCE

SINGLE WITH BUILT-IN DIODE

30 V

19 A

19 A

.0075 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

2.7 W

76 A

FET General Purpose Powers

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

STS9P2UH7 by STMicroelectronics

STS9P2UH7

STMicroelectronics

STS9P2UH7 by STMicroelectronics is a P-CHANNEL FET with 9A max drain current and 2.7W power dissipation. Ideal for applications requiring high power efficiency in surface mount configurations, such as power management systems or motor control circuits operating up to 150 °C.

SINGLE

9 A

9 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

P-CHANNEL

2.7 W

Other Transistors

YES

NOT SPECIFIED

STS15N4LLF3 by STMicroelectronics

STS15N4LLF3

STMicroelectronics

STS15N4LLF3 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.007 ohm RDS(on), and operates in ENHANCEMENT MODE up to 150°C.

2000 mJ

SINGLE WITH BUILT-IN DIODE

40 V

15 A

15 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

2.7 W

60 A

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON

STS30N3LLH6 by STMicroelectronics

STS30N3LLH6

STMicroelectronics

STS30N3LLH6 from STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 30 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact designs, it comes in an 8-terminal surface mount package.

525 mJ

SINGLE WITH BUILT-IN DIODE

30 V

30 A

30 A

.0035 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.7 W

120 A

Not Qualified

FET General Purpose Power

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

30

SWITCHING

SILICON

NILMS4501NR2G by Onsemi

NILMS4501NR2G

Onsemi

NILMS4501NR2G by Onsemi is a N-CHANNEL FET with 24V DS Breakdown Voltage, 14A IDM, and 0.016 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it has a 175 °C Max Operating Temp and 50mJ EAS rating.

50 mJ

DRAIN

CURRENT MIRROR WITH BUILT-IN DIODE

24 V

9.5 A

9.5 A

.016 ohm

METAL-OXIDE SEMICONDUCTOR

R-PBCC-N4

e3

1

1

4

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

2.7 W

14 A

Not Qualified

FET General Purpose Power

YES

TIN

NO LEAD

BOTTOM

SWITCHING

SILICON

STS12N3LLH5 by STMicroelectronics

STS12N3LLH5

STMicroelectronics

STS12N3LLH5 from STMicroelectronics is an N-channel FET ideal for switching applications. It features a max drain current of 12 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Its compact design ensures efficient performance in surface mount configurations.

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

12 A

12 A

.0097 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.7 W

48 A

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

40

SWITCHING

SILICON

STS20N3LLH6 by STMicroelectronics

STS20N3LLH6

STMicroelectronics

STS20N3LLH6 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 20 A, a breakdown voltage of 30 V, and low on-resistance of 0.0075 Ω. Ideal for compact power management in electronics.

ULTRA-LOW RESISTANCE

SINGLE WITH BUILT-IN DIODE

30 V

20 A

20 A

.0075 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

2.7 W

80 A

Not Qualified

FET General Purpose Power

YES

GULL WING

DUAL

SWITCHING

SILICON

STS11N3LLH5 by STMicroelectronics

STS11N3LLH5

STMicroelectronics

STS11N3LLH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 11 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronics.

SINGLE WITH BUILT-IN DIODE

30 V

11 A

11 A

.019 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.7 W

44 A

Not Qualified

FET General Purpose Power

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

30

SWITCHING

SILICON

STS17NH3LL by STMicroelectronics

STS17NH3LL

STMicroelectronics

STS17NH3LL by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 17 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronic devices.

LOW THRESHOLD

150 mJ

SINGLE WITH BUILT-IN DIODE

30 V

17 A

17 A

.0075 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

2.7 W

68 A

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON

STS9P3LLH6 by STMicroelectronics

STS9P3LLH6

STMicroelectronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 9 A;

SINGLE WITH BUILT-IN DIODE

30 V

9 A

9 A

.0225 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

2.7 W

2.7 W

36 A

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

DMN3008SCP10-7 by Diodes Incorporated

DMN3008SCP10-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Minimum Operating Temperature: -55 Cel; Transistor Element Material: SILICON;

ESD PROTECTED

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

METAL-OXIDE SEMICONDUCTOR

R-XBCC-N10

e4

1

2

10

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

2.7 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

SWITCHING

SILICON

DMT10H009SCG-13 by Diodes Incorporated

DMT10H009SCG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Reference Standard: MIL-STD-202; Operating Mode: ENHANCEMENT MODE;

109.4 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

48 A

.0095 ohm

METAL-OXIDE SEMICONDUCTOR

13 pF

S-PDSO-N8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.7 W

198.5 A

MIL-STD-202

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON