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166 W Power Field Effect Transistors (FET) 16

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTB5411NT4G by Onsemi

NTB5411NT4G

Onsemi

NTB5411NT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 185A IDM, and 0.01 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with a max power dissipation of 166W.

280 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

80 A

80 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

166 W

185 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

BUK7614-55A,118 by NXP Semiconductors

BUK7614-55A,118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 166 W; Avalanche Energy Rating (EAS): 125 mJ; Case Connection: DRAIN;

125 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

73 A

73 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

166 W

266 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

BUK9528-100A,127 by NXP Semiconductors

BUK9528-100A,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 166 W; Maximum Drain-Source On Resistance: .028 ohm; Terminal Position: SINGLE;

45 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

49 A

49 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

166 W

195 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUK9611-55A,118 by NXP Semiconductors

BUK9611-55A,118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 166 W; Maximum Operating Temperature: 175 Cel; Transistor Element Material: SILICON;

330 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

75 A

75 A

.012 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

166 W

266 A

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

GULL WING

SINGLE

30

SWITCHING

SILICON

PHP47NQ10T,127 by NXP Semiconductors

PHP47NQ10T,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 166 W; JEDEC-95 Code: TO-220AB; Operating Mode: ENHANCEMENT MODE;

45 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

47 A

47 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

166 W

187 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PHP73N06T,127 by NXP Semiconductors

PHP73N06T,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 166 W; Maximum Pulsed Drain Current (IDM): 266 A; JESD-30 Code: R-PSFM-T3;

125 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

73 A

73 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

166 W

266 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PHU101NQ03LT,127 by NXP Semiconductors

PHU101NQ03LT,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 166 W; Maximum Operating Temperature: 175 Cel; JESD-30 Code: R-PSIP-T3;

185 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

75 A

75 A

.0075 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

166 W

240 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTP5411NG by Onsemi

NTP5411NG

Onsemi

NTP5411NG by Onsemi is a single N-channel FET with built-in diode for switching applications. It features a min DS breakdown voltage of 60V, max pulsed drain current of 185A, and max power dissipation of 166W. Ideal for high-power switching circuits in various electronic devices.

280 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

80 A

80 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

166 W

185 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NVMFS6H801NWFT3G by Onsemi

NVMFS6H801NWFT3G

Onsemi

NVMFS6H801NWFT3G by Onsemi is a Power FET with 80V DS Breakdown Voltage, 900A IDM, and 960mJ EAS. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics. Operating from -55 to 175 °C, it features an N-CHANNEL configuration with built-in diode and metal-oxide semiconductor technology.

960 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

157 A

.0028 ohm

METAL-OXIDE SEMICONDUCTOR

22 pF

R-PDSO-F6

e3

1

1

6

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

166 W

900 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

STL260N3LLH6 by STMicroelectronics

STL260N3LLH6

STMicroelectronics

STL260N3LLH6 by STMicroelectronics is a powerful N-channel FET designed for high-performance applications. It supports a max drain current of 260 A and power dissipation of 166 W, operating up to 175 °C. Ideal for efficient power management in various electronic devices.

SINGLE

260 A

260 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

175 Cel

260

N-CHANNEL

166 W

FET General Purpose Power

YES

MATTE TIN

NVMFS5C410NT1G by Onsemi

NVMFS5C410NT1G

Onsemi

NVMFS5C410NT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.00092 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.

578 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

300 A

300 A

.00092 ohm

METAL-OXIDE SEMICONDUCTOR

70 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

166 W

900 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C410NT3G by Onsemi

NVMFS5C410NT3G

Onsemi

NVMFS5C410NT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.00092 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance.

578 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

300 A

300 A

.00092 ohm

METAL-OXIDE SEMICONDUCTOR

70 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

166 W

900 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C410NWFT1G by Onsemi

NVMFS5C410NWFT1G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 166 W; Maximum Drain Current (Abs) (ID): 300 A; JESD-609 Code: e3;

578 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

300 A

300 A

.00092 ohm

METAL-OXIDE SEMICONDUCTOR

70 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

166 W

900 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C410NWFT3G by Onsemi

NVMFS5C410NWFT3G

Onsemi

NVMFS5C410NWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.00092 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.

578 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

300 A

300 A

.00092 ohm

METAL-OXIDE SEMICONDUCTOR

70 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

166 W

900 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NTMJS1D0N04CTWG by Onsemi

NTMJS1D0N04CTWG

Onsemi

NTMJS1D0N04CTWG by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.00092 ohm RDS(on). Ideal for power management applications requiring high drain current handling capabilities. Operates in enhancement mode with a max power dissipation of 166W at temperatures ranging from -55 to 175 °C.

578 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

300 A

300 A

.00092 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G4

e3

1

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

166 W

900 A

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

DMT15H035SCT by Diodes Incorporated

DMT15H035SCT

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 166 W; Terminal Finish: MATTE TIN; No. of Terminals: 3;

144.5 mJ

SINGLE WITH BUILT-IN DIODE

150 V

46 A

.035 ohm

METAL-OXIDE SEMICONDUCTOR

4.2 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

166 W

184 A

MIL-STD-202

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON