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156 W Power Field Effect Transistors (FET) 8

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
AON6411 by Alpha & Omega Semiconductor

AON6411

Alpha & Omega Semiconductor

AON6411 by Alpha & Omega Semiconductor is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 340A IDM and 245mJ EAS, operating in ENHANCEMENT MODE at -55 to 150 °C. The METAL-OXIDE SEMICONDUCTOR technology ensures 0.0036 ohm RDS(ON) and 1395pF Crss for efficient performance.

245 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

85 A

.0036 ohm

METAL-OXIDE SEMICONDUCTOR

1395 pF

R-PDSO-F8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

156 W

340 A

YES

FLAT

DUAL

SWITCHING

SILICON

BSC046N10NS3GATMA1 by Infineon Technologies

BSC046N10NS3GATMA1

Infineon Technologies

Infineon's BSC046N10NS3GATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 350mJ EAS, and 0.0046 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150°C. Suitable for high-power circuits due to its 156W Pd rating.

350 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

100 A

17 A

.0046 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-N8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

156 W

400 A

FET General Purpose Power

YES

TIN

NO LEAD

DUAL

SWITCHING

SILICON

IPP90R500C3 by Infineon Technologies

IPP90R500C3

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Qualification: Not Qualified; Avalanche Energy Rating (EAS): 388 mJ;

388 mJ

SINGLE WITH BUILT-IN DIODE

900 V

11 A

11 A

.5 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

156 W

24 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STW9NK70Z by STMicroelectronics

STW9NK70Z

STMicroelectronics

STW9NK70Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 700V breakdown voltage, 30A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.

230 mJ

SINGLE WITH BUILT-IN DIODE

700 V

7.5 A

7.5 A

1.2 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

156 W

30 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

DMT4003SCT by Diodes Incorporated

DMT4003SCT

Diodes Incorporated

DMT4003SCT by Diodes Inc. is a N-CHANNEL FET with 40V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 350A and an avalanche energy rating of 215mJ. With a max power dissipation of 156W, this MOSFET operates in enhancement mode from -55 to 150°C.

215 mJ

SINGLE WITH BUILT-IN DIODE

40 V

205 A

205 A

.003 ohm

METAL-OXIDE SEMICONDUCTOR

21.4 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

156 W

350 A

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NXH40B120MNQ1SNG by Onsemi

NXH40B120MNQ1SNG

Onsemi

NXH40B120MNQ1SNG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. It features 44A max drain current, 156W power dissipation, and operates in enhancement mode. With a max operating temperature of 150 °C and silicon carbide element material, it offers high performance in various industrial settings.

ISOLATED

COMPLEX

1200 V

44 A

44 A

METAL-OXIDE SEMICONDUCTOR

19 pF

R-XUFM-X32

3

32

ENHANCEMENT MODE

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

156 W

132 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

TK65G10N1,RQ by Toshiba

TK65G10N1,RQ

Toshiba

Toshiba's TK65G10N1,RQ is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features 283A max pulsed drain current and 0.0045 ohm max drain-source resistance. With a small outline package style and 150°C max operating temp, it offers high power dissipation capabilities.

93 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

100 A

.0045 ohm

METAL-OXIDE SEMICONDUCTOR

42 pF

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

156 W

283 A

YES

GULL WING

SINGLE

SWITCHING

SILICON

LSIC1MO120G0120 by Littelfuse

LSIC1MO120G0120

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Package Style (Meter): FLANGE MOUNT; Maximum Drain-Source On Resistance: .15 ohm;

ULTRA LOW RESISTANCE

DRAIN

SINGLE WITH BUILT-IN DIODE

1200 V

27 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

7 pF

TO-247AD

R-PSFM-T4

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

156 W

60 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE