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135 W Power Field Effect Transistors (FET) 6

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STP6NB90 by STMicroelectronics

STP6NB90

STMicroelectronics

STP6NB90 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 900V breakdown voltage, 5.8A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.

HIGH VOLTAGE

250 mJ

SINGLE WITH BUILT-IN DIODE

900 V

5.8 A

5.8 A

2 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e0

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

135 W

23 A

Not Qualified

FET General Purpose Power

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB22NS25ZT4 by STMicroelectronics

STB22NS25ZT4

STMicroelectronics

STB22NS25ZT4 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 22 A, breakdown voltage of 250 V, and power dissipation up to 135 W. Ideal for high-performance power management in compact designs.

350 mJ

SINGLE WITH BUILT-IN DIODE

250 V

22 A

22 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

135 W

88 A

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

STP22NS25Z by STMicroelectronics

STP22NS25Z

STMicroelectronics

STP22NS25Z by STMicroelectronics is a robust N-channel FET designed for switching applications. It features a max drain current of 22 A, a breakdown voltage of 250 V, and operates at up to 150 °C. Ideal for high-power circuits with efficient thermal management.

350 mJ

SINGLE WITH BUILT-IN DIODE

250 V

22 A

22 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

135 W

88 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB14NK50Z-1 by STMicroelectronics

STB14NK50Z-1

STMicroelectronics

STB14NK50Z-1 from STMicroelectronics is a robust N-channel FET designed for switching applications. It features a 500V breakdown voltage, 14A max drain current, and 135W power dissipation. Ideal for high-efficiency power management in various electronic devices.

AVALANCHE RATED

400 mJ

SINGLE WITH BUILT-IN DIODE

500 V

14 A

14 A

.38 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

135 W

48 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

FDD10AN06A0-F085 by Onsemi

FDD10AN06A0-F085

Onsemi

Onsemi's FDD10AN06A0-F085 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 50A Drain Current, 0.0105 ohm On Resistance, and 135W Power Dissipation, it operates in ENHANCEMENT MODE. With a temperature range of -55 to 175 °C, this MOSFET is suitable for automotive (AEC-Q101) and industrial use.

429 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

50 A

11 A

.0105 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

135 W

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

FDD2572-F085 by Onsemi

FDD2572-F085

Onsemi

FDD2572-F085 by Onsemi is a N-CHANNEL power field effect transistor (FET) with a min DS breakdown voltage of 150V. It is designed for switching applications and has a max drain current of 29A. This surface mount transistor has a small outline package style and operates in an enhancement mode.

36 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

150 V

29 A

4 A

.054 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

135 W

Not Qualified

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON