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112 W Power Field Effect Transistors (FET) 7

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVMFS4841NWFT1G by Onsemi

NVMFS4841NWFT1G

Onsemi

NVMFS4841NWFT1G by Onsemi is a single N-channel Power FET with 89A max drain current and 112W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175 °C. Ideal for high-power applications requiring efficient switching in surface-mount configurations.

SINGLE

89 A

89 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

175 Cel

260

N-CHANNEL

112 W

FET General Purpose Power

YES

TIN

30

NVMFS4841NT1G by Onsemi

NVMFS4841NT1G

Onsemi

NVMFS4841NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 336A IDM, and 0.0114 ohm RDS(ON). Ideal for power management applications in automotive industry due to AEC-Q101 standard compliance.

180 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

89 A

16 A

.0114 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

112 W

336 A

Not Qualified

AEC-Q101

FET General Purpose Power

YES

Tin (Sn)

FLAT

DUAL

NOT SPECIFIED

SILICON

NVMFS5833NT1G by Onsemi

NVMFS5833NT1G

Onsemi

NVMFS5833NT1G by Onsemi is a N-CHANNEL FET with 86A ID and 112W power dissipation. Ideal for high-power applications, it operates at up to 175 °C with surface mount configuration. Suitable for various industrial and automotive uses due to its robust metal-oxide semiconductor technology.

SINGLE

86 A

86 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

175 Cel

260

N-CHANNEL

112 W

FET General Purpose Power

YES

MATTE TIN

30

NVMFS5833NT3G by Onsemi

NVMFS5833NT3G

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 112 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): 30;

SINGLE

86 A

86 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

175 Cel

260

N-CHANNEL

112 W

FET General Purpose Power

YES

TIN

30

NVMFS5833NWFT1G by Onsemi

NVMFS5833NWFT1G

Onsemi

NVMFS5833NWFT1G by Onsemi is a single N-channel Power FET with 86A max drain current and 112W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175 °C. Ideal for high-power applications requiring efficient switching and thermal performance.

SINGLE

86 A

86 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

175 Cel

260

N-CHANNEL

112 W

FET General Purpose Power

YES

TIN

30

NVMFS5833NWFT3G by Onsemi

NVMFS5833NWFT3G

Onsemi

NVMFS5833NWFT3G by Onsemi is an N-CHANNEL FET with 86A max drain current and 112W max power dissipation. Ideal for high-power applications, it operates at up to 175 °C and features a metal-oxide semiconductor technology. Suitable for surface mount configurations, this transistor is designed for robust performance in demanding environments.

SINGLE

86 A

86 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

175 Cel

260

N-CHANNEL

112 W

FET General Purpose Power

YES

TIN

30

MTP20N15E by Onsemi

MTP20N15E

Onsemi

MTP20N15E by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 112W at 150 °C.

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

150 V

20 A

20 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e0

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

N-CHANNEL

112 W

60 A

Not Qualified

FET General Purpose Power

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON